T3/2Dependence of the Interlayer Exchange Coupling in Ferromagnetic Multilayers

Abstract

The temperature dependence of the interlayer exchange coupling in ferromagnetic films coupled across nonmagnetic spacers is determined via in situ ferromagnetic resonance experiments for various systems. Clear evidence for a T(3/2) law is found over a wide temperature regime.

Interaction between exchange-bias systems inNi80Fe20∕Fe50Mn50∕Leung1, Blamire2 2005Phys. Rev. B

“…This model has found independent support from other experiments. 31 With the framework of this model, we would expect to observe a change in H ex under FC and ZFC conditions in the trilayer samples. In the ZFC situation, biasing is established in the Py/FeMn system during the deposition process.…”

Electronic and magnetic properties of bimetallicL10cuboctahedral clusters by means of fully relativistic density-functional-based calculations

“…Focusing in the field of magnetic recording, a huge amount of experimental and theoretical work has been carried out during the last decade to seek novel approaches to construct advanced materials for ultrahigh density magnetic storage, with the aim of increasing the state-of-the-art beyond 1 Tbit/in 2( [8,[12][13][14][15] ) . Most approaches are focused on thin films or multilayers [16][17][18] and recently on slabs [19]. However, during the last decade has emerged the possibility to use clusters deposited on surfaces [20][21][22][23][24][25][26] to increase the recording density.…”

Competition between interfacial and interlayer exchange couplings in Co/Cr2O3/Fe trilayers

“…The competition of these two couplings leads to a rather strong temperature dependence of the coupling. Recently, several studies were carried out on the temperature dependence of magnetic coupling via metallic or insulating layers [10,21,22]. J(T) = J(0 K)(T/T 0 )/(sinh(T/T 0 )).…”

“…J(T) = J(0 K)(T/T 0 )/(sinh(T/T 0 )). Here, J(0 K) is the interlayer coupling strength at T = 0 K, T 0 =h F /2 k B d is the characteristic temperature, d being the thickness of the spacer [21], in which the interlayer coupling strength monotonously decreases/increases for metal/insulator spacer with increasing temperature [8]. The exchange bias field H EX decreases with increasing temperature [23], and the interfacial coupling energy J EX = H EX M S t FM , M S and t FM are the saturation magnetization and the thickness of the FM layer, respectively [24].…”