Mobility of electrons in bulk GaN and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="no

Ridley, B. K.; Foutz, B. E.; Eastman, L.F.

doi:10.1103/physrevb.61.16862

Cited by 162 publications

(102 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The acoustic phonon scattering is calculated by considering two scattering mechanisms, including deformation potential and piezoelectric scattering. The mobility expression of deformation potential is given by [22] µ dp = 16ρeu…”

Section: Acoustic Phonon Scatteringmentioning

confidence: 99%

“…Since the mobility and density of the 2DEG in heterostructures are the key parameters related to the device performance, a detailed study of these parameters together with scattering mechanisms is of critical importance for the device applications of Al x Ga 1−x N/GaN heterostructures. The analyses of carrier transport properties in Al x Ga 1−x N/GaN heterostructures have been reported in a number of papers [9][10][11][12]. In the majority of cases, these studies have been based on the analysis of the temperature dependent single magnetic field Hall measurements.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Li̇şesi̇vdi̇n¹,

Acar²,

Kasap³

et al. 2007

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Hall effect measurements on undoped Al 0.25 Ga 0.75 N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). Magnetic field dependent Hall data were analysed using the quantitative mobility spectrum analysis (QMSA) technique. The mobility and density within the two-dimensional electron gas (2DEG) at the Al 0.25 Ga 0.75 N/GaN interface and within the underlying GaN layer were successfully separated by QMSA. Mobility analysis has been carried out using both the measured Hall data at a single field and the extracted data from QMSA. Analysis of the temperature-dependent mobility of 2DEG extracted from QMSA indicates that the interface roughness and alloy disorder scattering mechanisms are the dominant scattering mechanisms at low temperatures while at high temperatures only polar optical phonon scattering is the dominant mechanism. Al 0.25 Ga 0.75 N/GaN interface related parameters such as well width, deformation potential constant and correlation length were also accurately obtained from the fits of the simple analytical expressions of scattering mechanisms to the 2DEG mobility.

show abstract

Section: Acoustic Phonon Scatteringmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Li̇şesi̇vdi̇n¹,

Acar²,

Kasap³

et al. 2007

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…and K 2 av is the average electromechanical coupling coefficient as calculated according to Ridley et al 35 and I 2 ðk 0 ; kÞ is a factor which represents the wave function overlap integral over the unit cell before and after scattering, which is taken to be unity. 31 Deformation potential scattering, sometimes known as acoustic phonon scattering, is given by 31…”

Section: Electron Transport Modelmentioning

confidence: 99%

“…In this work, the alloy scattering potential is obtained by fitting to experimental data when literature values are not available. Polar optical phonon scattering is given by 4,35 …”

Section: Electron Transport Modelmentioning

confidence: 99%

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Sztein

Haberstroh

Bowers

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

The thermoelectric properties of III-nitride materials are of interest due to their potential use for high temperature power generation applications and the increasing commercial importance of the material system; however, the very large parameter space of different alloy compositions, carrier densities, and range of operating temperatures makes a complete experimental exploration of this material system difficult. In order to predict thermoelectric performances and identify the most promising compositions and carrier densities, the thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN are modeled. The Boltzmann transport equation is used to calculate the Seebeck coefficient, electrical conductivity, and the electron component of thermal conductivity. Scattering mechanisms considered for electronic properties include ionized impurity, alloy potential, polar optical phonon, deformation potential, piezoelectric, and charged dislocation scattering. The Callaway model is used to calculate the phonon component of thermal conductivity with Normal, Umklapp, mass defect, and dislocation scattering mechanisms included. Thermal and electrical results are combined to calculate ZT values. InxGa1−xN is identified as the most promising of the three ternary alloys investigated, with a calculated ZT of 0.85 at 1200 K for In0.1Ga0.9N at an optimized carrier density. AlxGa1−xN is predicted to have a ZT of 0.57 at 1200 K under optimized composition and carrier density. InxAl1−xN is predicted to have a ZT of 0.33 at 1200 K at optimized composition and carrier density. Calculated Seebeck coefficients, electrical conductivities, thermal conductivities, and ZTs are compared with experimental data where such data are available.

show abstract

“…The efforts undertaken on the investigation of the III-Nitrides steady-state transport properties, looking for a better determination of bulk material parameters and band structure [116], are relevant for establishing their figure of merit for electronic devices with certain confidence. However, despite the improved understanding of the steadystate transport properties of III-Nitrides obtained in the last few years, the agreement of the carriers' mobility data with theoretical descriptions varies from broad to very good [117]; only a qualitative agreement was obtained between theoretical predictions and the recent measurements of the electron velocity-field characteristics in GaN [118].…”

Section: Nonlinear Transport In Highly-polar Semiconductorsmentioning

confidence: 96%

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Rodrigues¹,

Silva²,

Silva³

et al. 2010

Braz. J. Phys.

View full text Add to dashboard Cite

The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on ThermoStatistics. We do face situations in electronics and optoelectronics involving physical-chemical systems farremoved-from equilibrium, where ultrafast (in pico-and femto-second scale) and non-linear processes are present. Further, we need to be aware of the rapid unfolding of nano-technologies and use of low-dimensional systems (e.g., nanometric quantum wells and quantum dots in semiconductor heterostructures). All together this demands having an access to a Statistical Mechanics being efficient to deal with such requirements. It is worth noticing that the renowned Ryogo Kubo once stated that "statistical mechanics has been considered a theoretical endeavor. However, statistical mechanics exists for the sake of the real world, not for fictions. Further progress can only be hoped by close cooperation with experiment". Moreover, one needs to face the study of soft matter and fluids with complex structures (usually of the average self-affine fractal-like type). This is relevant for technological improvement in industries like, for example, that of polymers, petroleum, cosmetics, food, electronics and photonics (conducting polymers and glasses), in medical engineering, etc. It is then required to introduce a thermo-hydrodynamics going well beyond the classical (Onsagerian) one. Moreover, in the both type of situations above mentioned there often appear difficulties of description and objectivity (existence of so-called "hidden constraints"), which impair the proper application of the conventional ensemble approach used in the general, logically and physically sound, and well established Boltzmann-Gibbs statistics. A tentative to partially overcome such difficulties consists in resorting to non-conventional approaches. Here we briefly describe the construction of a Non-Equilibrium Statistical Ensemble Formalism (NESEF) that can deal, within a certain degree of success, with the situations above described. Several particular instances involving experimental observations and measurements in the area of semiconductor physics and in physics of fluids, which were analyzed in the context of the theory, are summarized. They comprise the cases of ultrafast optical spectroscopy; optical and transport processes in low-dimensional complex semiconductors; nonlinear transport in doped highly-polar semiconductors (of use in "blue diodes") under moderate to high electric fields; nonlinear higher-order thermo-hydrodynamics in fluids under driven flow, in normal solutions and in complex situations as in solutions of polymers, micelles, DNA, and in microbatteries.

show abstract

Mobility of electrons in bulk GaN andAlxGa1−xN/
B. K. Ridley
¹
,
B. E. Foutz
²
,
L.F. Eastman
³

Cited by 162 publications

References 23 publications

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Contact Info

Product

Resources

About

Mobility of electrons in bulk GaN andAlxGa1−xN/B. K. Ridley1, B. E. Foutz2, L.F. Eastman3

Cited by 162 publications

References 23 publications

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Contact Info

Product

Resources

About

Mobility of electrons in bulk GaN andAlxGa1−xN/
B. K. Ridley
¹
,
B. E. Foutz
²
,
L.F. Eastman
³

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0.25Ga_0.75N/GaN heterostructures