Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Khayer, M. Abul; Lake, Roger K.

doi:10.1063/1.3510502

Cited by 15 publications

(6 citation statements)

References 45 publications

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“…To have a discretized form that is compact and valid for arbitrary nanowire orientation, we rewrite the eight-band k · p operator in (7) as [24] [110] in yz plane by θ with sin θ = 1/ √ 3. Once we have k in terms of k , we plug them into the Hamiltonian expression (1) to obtain the new Hamiltonian (now in k ).…”

Section: Appendix Discretization Of the K · P Hamiltonianmentioning

confidence: 99%

Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Huang

Zhang

Chew

et al. 2014

IEEE Trans. Electron Devices

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Simulations of nanoelectronic devices with nonequilibrium Green's function are computationally very intensive, in particular, when combined with multiband approaches, such as the k · p methods. To reduce the cost and make the simulation of realistic devices tractable, we have developed a model order reduction method for the simulation of hole transport in silicon nanowires using three-and six-band k · p models. It is shown in this paper that, with a spurious band elimination process, the method can be readily extended to the eight-band case that enables us to simulate band-to-band tunneling devices. The method is demonstrated via constructing reduced models for indium arsenide (InAs) nanowires and simulation of I-V characteristics of InAs tunneling field-effect transistors (TFETs). The results indicate that significant model reduction can be achieved with good accuracy retained. The method is then applied to study InAs TFETs with different channel orientations and source-pocket TFETs with n-p-i-p doping profiles.Index Terms-Band-to-band tunneling (BTBT), eight-band k · p model, indium arsenide (InAs) nanowires, model order reduction (MOR), nonequilibrium Green's function (NEGF), source-pocket TFETs, tunneling field-effect transistors (TFETs).

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Section: Appendix Discretization Of the K · P Hamiltonianmentioning

confidence: 99%

Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Huang

Zhang

Chew

et al. 2014

IEEE Trans. Electron Devices

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“…Селективная эпитаксия III−N-гетероструктур с субмикрометровыми размерами открывает широкие перспективы для создания различных устройств нанофотоники и наноэлектроники нового поколения на основе широкозонных соединений InAlGaN [1][2][3][4][5][6], в которых используется неоднородность физических свойств в трех измерениях, -например, квантовых фотонных логических устройств. Первым этапом в развитии этого направления является управляемое создание объектов с субмикрометровыми размерами в латеральном и вертикальном направлениях.…”

Section: Introductionunclassified

Селективный Эпитаксиальный Рост III-N-структур С Использованием Ионной Нанолитографии

Лундин¹,

Цацульников²,

Родин³

et al. 2018

Физика И Техника Полупроводников

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The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si_3N_4 layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si_3N_4 mask on the character of selective epitaxy is studied.

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“…In our previous work high voltage Schottky barrier diodes based on the vertical NW architecture was investigated both theoretically and experimentally [14]. On the other hand, nanowire field effect transistors (NWFETs) fabricated in InAs [15] and Si [16]- [18] have been reported along with lateral GaN NWFETs which involves both theoretical [19] and experimental [20], [21] approaches for low voltage applications. Vertical GaN NWFETs with a high aspect ratio are reported recently [22], [23].…”

Section: Introductionmentioning

confidence: 99%

(Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

Sabui¹,

Zubialevich²,

Pampili³

et al. 2017

ECS Trans.

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Concept of vertical Gallium Nitride (GaN) nanowire field effect transistors (NWFETs) for high voltage power electronic applications is investigated through three dimensional (3D) TCAD simulations in this paper. The proposed GaN NWFET can operate either in a normally-off or a normally-on mode depending on the specific device design. A gate-all-around (GAA) structure coupled with a strong dielectric REduced SURface Field (RESURF) effect has the potential to offer blocking voltages over 900 V with very low specific on-resistance for the NWFETs. V RB 2 /R ON and Q GD x R DS(ON) Figures of Merits (FoMs) of the NWFET are extracted and compared with other state of the art GaN, SiC and Si field effect transistors to get a comparative understanding of the potential of the NW architecture for high voltage applications.

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Cited by 15 publications

References 45 publications

Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Селективный Эпитаксиальный Рост III-N-структур С Использованием Ионной Нанолитографии

(Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

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