Modeling of Multiple-Quantum-Well p-i-n Photodiodes

Zhou, Gan; Runge, Patrick

doi:10.1109/jqe.2014.2305015

Cited by 24 publications

(20 citation statements)

References 20 publications

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“…Since carriers travel in different layers with different effective mass and energy, the bandwidth of the proposed phase shifter can be limited by the time taken by the carriers to arrive from the top layer to the bottom layer under an applied reverse bias. The carrier transit time from layer 7 to layer 1 can be calculated as [33]:…”

Section: Modulation Bandwidth Analysismentioning

confidence: 99%

“…The band offset and electric field is positive if the band energy of the next layer is higher and the electric field aids in carrier transit respectively. The 3-dB modulation bandwidth (f 3dB ) of the proposed phase shifter is calculated as [33]:…”

Section: Modulation Bandwidth Analysismentioning

confidence: 99%

“…where, f τ and f RC are the transit time limited and RC effect limited bandwidth given in [32], [33]:…”

Section: Modulation Bandwidth Analysismentioning

confidence: 99%

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Design and Analysis of a Graded-Index Strained Si<inline-formula> <tex-math notation="LaTeX">$_{1-x}$ </tex-math> </inline-formula>Ge<inline-formula> <tex-math notation="LaTeX">$_x$</tex-math> </inline-formula> Optical PN Phase Shifter

Mishra

Sonkar

2018

IEEE Photonics J.

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In this paper, a graded-index strained Si 1−x Ge x optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550 nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122 • /mm, V π L π of 0.74 V.cm, and insertion loss of 4 dB at 5 V reverse bias with a 3-dB modulation bandwidth of 27.5 GHz has been obtained for a 500 nm × 250 nm cross-section rib waveguide with 50 nm slab. A 15 • /mm increase in phase shift and 0.08 V.cm decrease in V π L π has been observed when the junction is shifted by 60 nm towards the N side.

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Section: Modulation Bandwidth Analysismentioning

confidence: 99%

Section: Modulation Bandwidth Analysismentioning

confidence: 99%

See 1 more Smart Citation

Design and Analysis of a Graded-Index Strained Si<inline-formula> <tex-math notation="LaTeX">$_{1-x}$ </tex-math> </inline-formula>Ge<inline-formula> <tex-math notation="LaTeX">$_x$</tex-math> </inline-formula> Optical PN Phase Shifter

Mishra

Sonkar

2018

IEEE Photonics J.

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“…Especially, quantum confinement space, which gives tunable optical absorption, may cause yield resonance shifts, including far-infrared optical waves within the conduction subbands, even at large band gaps. As a result of the carrier confinement, optical transitions provide computational models in the p-i-n diodes with multiple quantum well [3], far-infrared photodetector [4], and solar device [5]. Regarding infrared photodetection obtained from confinement space, InAs nano-disks in a QW cause a calculable optical absorption [6].…”

Section: Introductionmentioning

confidence: 99%

Infrared relative dielectric permittivity and refractive index on the spherical CdSe/ZnS heteronanocrystals with self-consistent field

Ortakaya,

Duque

2024

Phys. Scr.

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We deal with allowed-subband quantum states of two-electron in a semiconductor spherical core/shell quantum dot. Within framework of the infrared transitions, solving the Schrödinger-Poisson equation for many body interactions on the conduction-subbands, we obtain energy shifts in the absorption peaks of dielectric function and refractive index. The energy eigenvalues of the CdSe/ZnS nanocrystal have been computed as a function of the layer thicknesses via self-consistent field. The transitions related to $D^{-}$ and $D^0$ states, have been plotted considering linear dielectric permittivity. Refractive index and absorption coefficient under 3.0 nm radius have been also presented as a function of infrared photon energies.

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“…In addition, the numerical simulator is not always convenient to see the impact of cell parameters and optimize the cell design. Various analytical expressions have been employed to describe the collection efficiency of the charge carriers from MQWs such as ( ) ( ) is the recombination lifetime, and N is the stack number of QWs [12,13,17,18]. In addition to a variety of expressions, they are over-simplified.…”

Section: Introductionmentioning

confidence: 99%

Investigation and modeling of photocurrent collection process in multiple quantum well solar cells

Toprasertpong

Inoue

Nakano

et al. 2018

Solar Energy Materials and Solar Cells

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Solar cells employing quantum wells can enhance the light absorption but suffer from the difficulty in photogenerated carrier extraction. Here, we analyzed the spectral response and the photocarrier collection mechanism of p-i-n multiple quantum well (MQW) solar cells using the effective-mobility model. Both the simulation and experiment results imply that the spatial profiles of electron and hole densities in MQWs play an important role in the carrier collection process. By considering the recombination increment under illumination, our findings suggest that the concept of the majority/minority carriers is important even in the intrinsic region: photogenerated electrons and holes only experience significant recombination when passing through the hole-rich and electron-rich regions, respectively. This can accurately explain the photocurrent behavior in cells with high background doping, background illumination, and different MQW positions. Based on the experimental findings, we derived analytical formulae for carrier collection efficiency, which directly show the impact of each cell parameter and can be used for the systematic cell design. . For w = 5 nm, the escape rate is boosted by less than 10% under E = 10 kV/cm compared to that under flat-band.

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Modeling of Multiple-Quantum-Well p-i-n Photodiodes

Cited by 24 publications

References 20 publications

Design and Analysis of a Graded-Index Strained Si<inline-formula> <tex-math notation="LaTeX">$_{1-x}$ </tex-math> </inline-formula>Ge<inline-formula> <tex-math notation="LaTeX">$_x$</tex-math> </inline-formula> Optical PN Phase Shifter

Design and Analysis of a Graded-Index Strained Si<inline-formula> <tex-math notation="LaTeX">$_{1-x}$ </tex-math> </inline-formula>Ge<inline-formula> <tex-math notation="LaTeX">$_x$</tex-math> </inline-formula> Optical PN Phase Shifter

Infrared relative dielectric permittivity and refractive index on the spherical CdSe/ZnS heteronanocrystals with self-consistent field

Investigation and modeling of photocurrent collection process in multiple quantum well solar cells

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