Modeling optical microscope images of integrated-circuit structures

Yuan, Chi–Min; Strojwas, Andrzej J.

doi:10.1364/josaa.8.000778

Cited by 31 publications

(13 citation statements)

References 5 publications

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“…where ez0 = 1d zo)e2 dx (4) Here, z0 is the coordinate of the reference plane, G()(, F) is the pseudoperiodic Green's function for the medium i between i S , S lying below , and 1/ are the amplitudes of the plane waves incident on S from medium i. Also, o = ksinO + = s/k?…”

Section: Multiple Scattering Between Adjacent Surfacesmentioning

confidence: 99%

Improvement of the physical-optics approximation for topography simulation in optical lithography

Yeung

Neureuther

1993

SPIE Proceedings

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This paper discusses various techniques to implement the physical-optics approximation for topography simulation.The accuracies of the various techniques are examined by comparison with the results of a rigorous, time-domain method. It is shown that inter-surface multiple scattering effects and near-field diffraction effects in intra-surface multiple scattering must both be taken into account to obtain satisfactory agreement with the time-domain method. A technique to correct for the effects of non-physical-optics edge currents is also described.

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Section: Multiple Scattering Between Adjacent Surfacesmentioning

confidence: 99%

Improvement of the physical-optics approximation for topography simulation in optical lithography

Yeung

Neureuther

1993

SPIE Proceedings

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“…Subsequent related work has been reported (Gale et al, 1987;Sheppard and Sheridan, 1989;Sheridan and Sheppard, 1994). Yuan and Strojwas (1991) extended the work of Nyyssonen and Kirk to include the TM mode (p-polarization) and were able to model microscopes with different polarization states.…”

Section: Introductionmentioning

confidence: 98%

Surface Scattering Techniques in Scanning Optical Microscopy

Aguilar

Méndez²

1999

Focus on Multidimensional Microscopy

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A numerical procedure to calculate images of highly reflecting metallic surfaces in optical scanning microscopy is described. The interaction between the focused beam and the sample is describe fairly rigorously with an approach based on Green's integral theorem and an impedance boundary condition. The procedure is applied to the study of the confocal scanning optical microscope in the profiling mode of operation

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“…(1,2,3). When applying the waveguide method, the structure is usually split into different layers with uniform dielectric functions in the direction normal to the layers.…”

Section: Introductionmentioning

confidence: 99%

METROPOLE-3D: a three-dimensional electromagnetic field simulator for EUV masks under oblique illumination

et al. 2003

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Conventional lithography techniques have been losing their ability to easily support continuous shrinking of feature sizes, especially when the pattern half-pitch is <60 nm. EUV lithography is one of the leading contenders to replace these conventional techniques. Because the EUV mask structure is many times thicker than the illumination wavelength, scalar Fraunhofer diffraction calculations cannot describe the scattering of light from the EUV masks with enough accuracy.In this paper, we present a rigorous 3-D electromagnetic field simulator for EUV masks. The simulator is based on a 3-D waveguide method developed to calculate the characteristics of the light scattered from nonplanar EUV masks. A typical EUV mask contains as many as 80 reflective layers in addition to the absorbing layers, and we have developed a fast method to calculate the scattering matrix of the reflective layers. Also, based on the existing numerical techniques, we can describe the light scattering in the absorbing layers with complex index of refraction. The simulator has been recently modified to handle oblique illumination conditions, and this is the focus of our paper.Aerial images are calculated in the image plane of a typical EUV stepper, and a threshold resist model is used to predict the printed pattern size. We will first compare our work with published results on dense and isolated lines. Then, we will describe the results of our calculations for twodimensional patterns (e.g., contacts and islands) under oblique illumination. The typical simulation time is less than 10 hours on a desktop workstation for two-dimensional patterns.

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Modeling optical microscope images of integrated-circuit structures

Cited by 31 publications

References 5 publications

Improvement of the physical-optics approximation for topography simulation in optical lithography

Improvement of the physical-optics approximation for topography simulation in optical lithography

Surface Scattering Techniques in Scanning Optical Microscopy

METROPOLE-3D: a three-dimensional electromagnetic field simulator for EUV masks under oblique illumination

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