In this work we demonstrate the power, speed and effectiveness of an automated rules-based approach for performing optical proximity correction. The approach applies to both conventional and phase-shifting mask layouts for optical lithography. Complex imaging, substrate and process phenomena can be folded into comparatively few rules parameters. Using simple arithmetic, these parameters pre-compensate the layout for the combined proximity effects. The rules consist of edge rules and corner rules for biasing feature edges and for adding sub-resolution assist features. This paper describes an integrated solution which includes rules parameter generation and fast, hierarchical rules application. Experimental results demonstrate improved edge placements and wider process latitude than for non-corrected layouts.

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The aim ofour work was to develop rigorous models to study various optical alignment and metrology schemes implemented in commercial tools. These schemes indude wafer alignment schemes in steppers and linewidth measurement schemes in optical microscopes. A simulator called METRO based on the models developed has been implemented to facilitate this task. Theoretical and experimental verification efforts have been performed to examine the validity of the simulation results, and good agreement has been obtained. By utilizing METRO, process engineers can gain more insight into the equipment under operation so as to obtain more accurate alignment and measurement results. Also, the equation formulation in METRO is general enough so that optics designers can easily adopt or modify the code to help in devising innovative alignment and metrology schemes.