Modelling the operation of an a-Si:H based position sensitive detector

Abstract

A physical model is presented which allows calculation of the carrier and potential distributions and the output voltage of a one dimensional position sensitive detector based on an ITO/a-Si:H/Pd structure. The calculation results are in agreement with those experimentally measured. Using the experimental data the effective electron diffusion length in the ITO layer is estimated to be about 0.65 cm. The effect of surface recombination on the device characteristics is studied by a numerical method.