Modulating Resonance Modes and <i>Q</i> Value of a CdS Nanowire Cavity by Single Ag Nanoparticles

Shan, Xinyan; Feng, Xiao; Wang, Chunxiao; Wang, Qu‐Quan; Jia, Jin-Feng; Xue, Qi‐Kun

doi:10.1021/nl2022674

Cited by 32 publications

(25 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4][5][6][7][8] CdS is an excellent II-VI semiconductor material with a direct band gap of 2.42 eV at room temperature, which is a good candidate for optoelectronic applications in the visible spectrum range. The stimulated emission and lasing have been observed in CdS nanowires [9][10][11][12] and nanoribbons, 13,14 indicating that onedimensional CdS structures can be used as promising micro/ nanolasers for integrated photonics. Generally, the lasing mechanisms in the semiconductor microwire are attributed to the whispering-gallery mode (WGM) and Fabry-P erot (F-P) cavity.…”

mentioning

confidence: 99%

Two-photon pumped lasing in a single CdS microwire

Zhang

Wang

Liu

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

Two-photon pumped lasing in a single CdS microwire

Zhang

Wang

Liu

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Besides this material driven research certain treatments of the NW cavity were realized in order to achieve an efficient adjustment of the longitudinal resonator modes . Furthermore, a modification of the field distribution within the NW was achieved by placing the NW cavity in the vicinity of metallic surfaces or particles . Although the fundamental properties such as emission wavelength, polarization, and resonator modifications have been studied thoroughly within the past decades, further underlying technological relevant features remained relatively unstudied until recently.…”

Section: Introductionmentioning

confidence: 99%

Tailoring Spectral and Temporal Properties of Semiconductor Nanowire Lasers

Zapf

Sidiropoulos

Röder

2019

Advanced Optical Materials

View full text Add to dashboard Cite

Technology Roadmap for Semiconductors -ITRS 2.0" follows this generalized approach by combining the schemes "More-than-Moore" and "More Moore." The first one wants to incorporate (nondigital) functionalities into devices and systems providing additional value in different ways, while the second scheme aims for a continued shrinking of the physical dimensions of electrical switches in order to reduce cost and increase their performance. [1] Thus, the "Morethan-Moore" scheme considers promising (nano)photonic components to play a key role either as lasers, waveguides, or photo detectors in system on a chip devices (SoC) and optical interconnects (OI). These approaches require optical devices/ coherent light sources with a nanoscaled footprint available by low cost fabrication methods.In parallel, after the development of the first laser, [2] the applications of lasers have been extended into many different scientific areas as well as in many aspects of industrial and public life such as material modification/analysis, spectroscopy, medicine, optics, etc. [3] Along with these important innovations, there has always been the strong aim to miniaturize the laser devices, [4] which partially goes along with the need for miniaturized lasers in SoCs and OIs. The successive miniaturization already had strong impact on technologies like optical communication and furthermore led to microdisk lasers, [5] vertical cavity surface emitting lasers, [6] and photonic crystal lasers [7] based on semiconductor materials. However, the fundamental research in the past decade focused on investigating, exploring, and developing nanoscaled coherent light sources with even smaller footprint that can be integrated in SoCs/OIs, as envisaged by "More-than-Moore." Therefore, semiconductor nanowirebased lasers belong to the heavily investigated model systems, as they can be synthesized cheaply and offer an exceptionally small footprint. The scope of this review is thus to report on recent developments of individual semiconductor nanowires as potential nanoscaled coherent light sources with promising spectral and temporal lasing characteristics, which both need to be fully understood and optimized in order to unleash the potential of semiconductor nanowire lasers for a huge amount of on-chip applications. Note that the terms nanowires, nanorods, and nanopillars are treated equally within this review.Semiconductor optoelectronics have contributed tremendously to various aspects of the technological progress in the past. Recently, they also stimulate research in nanophotonics seeking to overcome the inherent limitations of electronic integrated circuits and satisfy the growing demand for faster onchip communications. In particular, nanowire (NW) lasers generate coherent light at the nanoscale and meanwhile work consistently at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the NW material. The underlying physics of their electronic and photonic systems are also studied very recently, thus...

show abstract

“…Combining metal nanostructures with 1D semiconductor nanowires provides a possible avenue for the realization of remote operation with excellent performance. The resonance cavity characteristics of CdS NW were investigated by manually putting a single Ag nanoparticle at different positions nearby an Ag NW based on the plasmon–exciton interaction . However, the operation to make metal NP approach to semiconductor NW by micromanipulator was too complex to achieve, and it was also hard to get the integrated metal–semiconductor hybrid structure.…”

Section: Introductionmentioning

confidence: 99%

The Remote Light Emission Modulated by Local Surface Plasmon Resonance for the CdSe NW–Au NP Hybrid Structure

Xia

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

CdSe nanowire (NW)–Au nanoparticle (NP) compounds are synthesized successfully using the method of physical vapor deposition, and the modulated remote emission is realized in the hybrid structure with strong metal–semiconductor coupling. The well‐crystallized, uniform morphology, smooth surface CdSe NW is attached with an Au NP on the terminal, which forms the integration structure with direct plasmon–exciton coupling of semiconductor–metal hybrid system. When the CdSe terminal or Au NP terminal of the hybrid structure is excited by the laser with wavelength of 633 nm, the remote light emission at another terminal is greatly modulated. To reveal the physical mechanism of energy conviction between plasmon and exciton, finite‐difference time‐domain simulations are performed for the CdSe NW–Au NP hybrid structures. The calculated results confirm that the modulation of remote light emission is attributed to the competing of the quench of photoluminescence and the electric field enhancement of local surface plasmon resonance. These works can provide deeper understanding of physical mechanism of plasmon and exciton coupling, and open up new application for the remote light sensing and detection.

show abstract

Modulating Resonance Modes and Q Value of a CdS Nanowire Cavity by Single Ag Nanoparticles

Cited by 32 publications

References 36 publications

Two-photon pumped lasing in a single CdS microwire

Two-photon pumped lasing in a single CdS microwire

Tailoring Spectral and Temporal Properties of Semiconductor Nanowire Lasers

The Remote Light Emission Modulated by Local Surface Plasmon Resonance for the CdSe NW–Au NP Hybrid Structure

Contact Info

Product

Resources

About