Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31μm (InyGa1−yAs/GaAs1−x Sbx)/GaAs bilayer quantum wells

Излучающие гетероструктуры с двухслойной квантовой ямой InGaAs/GaAsSb/GaAs и ферромагнитным слоем GaMnAs

“…Подтверждено, что, как и в слу-чае молекулярно-лучевой эпитаксии (МЛЭ) [7,8], пер-воначальное выращивание слоя твердого раствора GaAs 1−y Sb y способствует значительному возрастанию интенсивности и увеличению длины волны фотолюми-несцентного излучения гетеронаноструктур с двухслой-ной квантовой ямой In x Ga 1−x As/GaAs 1−y Sb y [5].…”

Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

“…The application of long wavelength optoelectronic devices has recently become more and more extensively. Many different semiconductor structures such as GaAsSb/GaAs single quantum well (QW) [1,2], GaNAsSb/GaA QW [3,4], InAs/GaAs quantum dots (QDs) [5], GaAsSb-GaInAs/GaAs bilayer quantum well (BQW) [6,7], GaAsSb/GaAs multiple quantum wells (MQWs) [8], and GaInNAs/GaAs MQWs [9] have been developed. 1.3 m wavelength laser diodes have attracted special attention due to their minimum losses in optical fiber communication.…”

Crystalline quality of GaAs1−x Bi x grown below 250 °C using molecular beam epitaxy

“…Incorporating Bi into GaAs achieves higher energy levels for the valence band edge than that of GaAs 2,27) alone, while incorporating In atoms into GaAs affects the conduction band edge. 28) Therefore, controlling the crystal structure, crystalline quality and defects of Bi-containing GaAs-based semiconductors at low temperatures is the first step toward achieving the PCAs. For this purpose, this paper focuses on a ternary alloy, GaAs 1−x Bi x , and reports molecular beam epitaxial (MBE) growth of GaAs 29,30) there is room for further discussion for detailed crystalline quality and Bi distribution of LTG GaAs 1−x Bi x .…”