Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators, and switches

Kobayashi, K.W.; Oki, A.K.; Umemoto, D.K.; Claxton, S.; Streit, D.C.

doi:10.1109/22.260720

Cited by 34 publications

(6 citation statements)

References 6 publications

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“…This low insertion loss represents the ohmic losses from the metal conductors for the RF signal as it traverses the switch. Compared with typical FET or p-i-n diode switches, which have insertion loss about 1 dB [7], [8], the micromechanical switches have significant advantages. For a system, such as a time-delay phase shifter, that may require many switches, the total loss is significantly lower when mechanical switches are utilized.…”

Section: Test Results and Discussionmentioning

confidence: 99%

Micromachined low-loss microwave switches

Yao

Chen

Eshelman

et al. 1999

J. Microelectromech. Syst.

357

202

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The design and fabrication of a micromechanical capacitive membrane microwave switching device is described. The switching element consists of a thin metallic membrane, which has two states, actuated or unactuated, depending on the applied bias. A microwave signal is switched on and off when the membrane is switched between the two states. These switches have a switching on speed of less than 6 s and a switching off speed of less than 4 s. The switching voltage is about 50 V. The switches have a bowtie shape and showed low insertion loss of 0.14 dB at 20 GHz and 0.25 dB at 35 GHz, and isolation of 24 dB at 20 GHz and 35 dB at 35 GHz. These devices offer the potential for building a new generation of low-loss high-linearity microwave circuits for a variety of phased antenna arrays for radar and communications applications. [324]

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Section: Test Results and Discussionmentioning

confidence: 99%

Micromachined low-loss microwave switches

Yao

Chen

Eshelman

et al. 1999

J. Microelectromech. Syst.

357

202

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“…Figure. 2 Topology schematic of the feedback circuit Variable gain amplifier applied in the WCDMA system should supply at least 21dB gain control range. We employed a PIN diode as a feedback of the amplifier to realize the gain controlling [8]. It is a current negative feedback loop.…”

Section: Sige Hbt Transistorsmentioning

confidence: 99%

A PIN Diode SiGe HBT Variable Gain Amplifier for WCDMA Applications

Jun-ning

Zhang

Xie

et al. 2009

2009 International Conference on Communication Software and Networks

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We report a novel PIN diode SiGe HBT variable gain amplifier (VGA) suited for the standard of WCDMA. The PIN diode which is employed in the feedback loop of the VGA play as a variable resistor to realize the gain control function. By adjusting the bias of the diode, the gain of the VGA can be changed. An inductor is utilized in the feedback loop to reduce the noise figure of the circuit. After matching the circuit, we get a variable gain amplifier with 21dB dynamic range, about 19dB maximum gain, and 2.6dB minimum noise figure. This work demonstrates a new method controlling the gain by adding a PIN diode in the feedback loop except changing the bias of the transistor.

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“…In the case of silicon FETs, for example, it can handle high power at low frequency, but the performance drops off dramatically as frequency increases (Ota et al, 1995). In the case of GaAs metal-semiconductor fieldeffect transistors (MESFETs) (Ayali, 1982;Caverly, 1993;Gopinath and Rankin, 1985;Slobodnik et al, 1989) and PIN diodes (Alekseev and Pavlidis, 1998;Kobayashi et al, 1993;Putnam et al, 1994) the high-frequency operation is fairly well with small signal amplitudes. In short, when the signal frequency is greater than a few gigahertz these solidstate switches have large insertion loss (typically 1-2 dB) and poor isolation (~−20 to −25 dB).…”

Section: Switches For Rf and Microwave Applicationsmentioning

confidence: 99%

Micromachined Antennas

2002

RF MEMS and Their Applications

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Printed and bound in Great Britain by Biddles Ltd, Guildford and King's Lynn This book is printed on acid-free paper responsibly manufactured from sustainable forestry in which at least two trees are planted for each one used for paper production.xii PREFACE fabrication technologies can help realize high Q micromechanical filters for frequencies up to and beyond 10 MHz, and micromachined surface acoustic wave (SAW) filters filling the gap up to 2 GHz. Fabrication processes for all these devices and their relative advantages are taken up extensively in this book. In addition, a brief description of packaging approaches that may be extended for these devices is also included for the sake of comprehensiveness in coverage.We have endeavoured to present these topics so as to guide graduate students interested to do research in microfabrication techniques and their applications. It is therefore envisaged that parts of this books would form the curricula of electrical and mechanical engineering, applied physics or materials science departments. In addition, this would also serve as a reference book for practicing researchers in these areas for further widening the scope of their research.Materials for this book have been taken from an advanced level course offered at Pennsylvania State University recently on RF MEMS, and many short courses presented across the world. Valuable comments from the participants of these courses have helped in evolving the contents of this book and are greatly appreciated. In particular we also wish to thank many of our colleagues and students, Taeksoo Ji, Yanan Sha, Roopa Tellakula, Hargsoon Yoon, and Bei Zhu, at the Center for Electronic and Acoustic Materials and Devices for their contributions in preparing the manuscript for this book.We would like to thank Professors Vasundara V. Varadan and Richard McNitt for their support and encouragement. Our thanks are also due to our families, in particular Nisy John, for bearing with our preoccupation in preparing this manuscript. We are also indebted to various researchers for their valuable contributions cited in this book.We are also grateful to the publisher's staff for their support, encouragement and willingness to give prompt assistance during this book project.

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Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators, and switches

Cited by 34 publications

References 6 publications

Micromachined low-loss microwave switches

Micromachined low-loss microwave switches

A PIN Diode SiGe HBT Variable Gain Amplifier for WCDMA Applications

Micromachined Antennas

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