Monolithically integrated In _0.53 Ga _0.47 As/In _0.52 Al _0.48 As (on InP) MSM/HFET photoreceiver grown by MBE

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

“…On the receiver side, there has been much research reported recently on the integration of InGaAs MSM detectors with FET's to form high performance monolithic receivers [67]- [70]. The most complex circuit reported to date [68] comprised an MSM-HEMT preamplifier, a HEMT cascode amplifier, Schottky level shifting diodes, and a HEMT output impedance driver-14 components in all-in a transimpedance amplifier formed on a 0.7 mm X 0.6 mm chip.…”

“…In an alternative approach, the HEMT layers are grown on top of the MSM in a single growth on a planar substrate [69], [70]. The resulting structure is illustrated in Fig.…”

“…The two circuits reported to date [69], [70] used the MSM barrier enhancement layer to isolate the HEMT from the MSM, and also for HEMT-HEMT isolation. In [69], a 200 nm Fedoped InP was used for the bamer enhancement layer (Fe acceptor levels pin the Fermi level at about midgap) and in [70], 150 nm of lattice-matched InAlAs, followed by 200 nm of InAlGaAs grading to InGaAs.…”

“…In [69], a 200 nm Fedoped InP was used for the bamer enhancement layer (Fe acceptor levels pin the Fermi level at about midgap) and in [70], 150 nm of lattice-matched InAlAs, followed by 200 nm of InAlGaAs grading to InGaAs. In both cases quite low leakage currents of -10 mA/cm2 were obtained at operating biases, and some gain was recorded at the higher biases.…”