MOS varactor modeling with a subcircuit utilizing the BSIM3v3 model

Molnar, K.; Rappitsch, Gerhard; Huszka, Z.; Seebacher, E.

doi:10.1109/ted.2002.1013277

Cited by 31 publications

(10 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a result, the average value of the capacitance reduces after breakdown. The decrease of the capacitance value increases the frequency of oscillation according to (7). The simulation of the VCO verifies that fact, which is shown in Table I.…”

Section: Effects Of Breakdown On Mos Devicessupporting

confidence: 68%

See 1 more Smart Citation

Breakdown effects on MOS varactors and VCO's

Sadat

Yang

Xiao

et al.

IEEE International Frequency Control Sympposium and PDA Exhibition Jointly With the 17th European Frequency and Time Forum, 200

View full text Add to dashboard Cite

The gate oxide breakdown effects of deep sub-micron devices, which degrade the performance of MOS varactors that in turn degrade the performance of LC Voltage Controlled Oscillators (VCO's), are presented. On wafer 0.16 µm CMOS devices are stressed; experimental data are analyzed and used for analytical derivations and simulations to show that the breakdown has twofold effects on the performance of the VCO's. Firstly, the increased conductance of the varactor degrades its quality, which increases the phase noise of the VCO's. This also reduces the amplitude at the output of the oscillator. Secondly, the value of the capacitance of the MOS varactor reduces, which shifts the oscillation frequency of the VCO's.

show abstract

Section: Effects Of Breakdown On Mos Devicessupporting

confidence: 68%

“…Due to decreased value of the amplitude of oscillation, varactor experiences less amount of voltage swing across it. Since, the C-V curve across a varactor is nonlinear and at high voltage swing, it exhibits more capacitance [3,7]. As a result, the average value of the capacitance reduces after breakdown.…”

Section: Effects Of Breakdown On Mos Devicesmentioning

confidence: 99%

Breakdown effects on MOS varactors and VCO's

Sadat

Yang

Xiao

et al.

IEEE International Frequency Control Sympposium and PDA Exhibition Jointly With the 17th European Frequency and Time Forum, 200

View full text Add to dashboard Cite

show abstract

“…A MOS varactor may also be used [25,[79][80][81] although care must be taken since the voltagecapacitance characteristic of the MOS varactor exhibits a sign change which must be avoided for stable closed loop operation in the PLL negative feedback loop. 13.…”

Section: Loadingmentioning

confidence: 99%

The Designer's Guide to Jitter in Ring Oscillators

McNeill¹,

Ricketts²

2009

View full text Add to dashboard Cite

“…For tuning integrated circuits, MOS varactors are generally preferred for their broader tuning range ( 30%) as compared to the p-n junction varactors ( 20%) over the same tuning voltage range [26]. However, the MOS varactors are nonlinear in the tuning range and the minimum factor of the MOS varactors is around 20-30 [25]- [29]. This may be acceptable in designs involving on-chip spiral inductors with lower factors, but can be a significant contributor to the insertion losses in the filter under consideration.…”

Section: F Filter Tuningmentioning

confidence: 99%

Integrated RF Interference Suppression Filter Design Using Bond-Wire Inductors

Khatri

Gudem

Larson

2008

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-Design techniques are presented for the realization of high-performance integrated interference suppression filters using bond-wire inductors. A new configuration is proposed for mitigating the impact of mutual coupling between the bond wires. A differential low-noise amplifier with an integrated on-chip passive interference suppression filter is designed at 2.1 GHz in a 0.18-m CMOS process, and achieves a transmit leakage suppression of 10 dB at 190-MHz offset. The differential filter uses metal-insulator-metal capacitors and bond-wire inductors and occupies only 0.22 mm 2 . The cascaded system achieves a measured gain of 9.5 dB with a 1.6-dB noise figure and 5 dBm out-of-band IIP 3 and consumes 11 mA from a 2-V supply.Index Terms-Bandpass filter (BPF), bond wires, CMOS, interference suppression, mutual inductance, wideband code division multiple access (WCDMA).

show abstract

MOS varactor modeling with a subcircuit utilizing the BSIM3v3 model

Cited by 31 publications

References 9 publications

Breakdown effects on MOS varactors and VCO's

Breakdown effects on MOS varactors and VCO's

The Designer's Guide to Jitter in Ring Oscillators

Integrated RF Interference Suppression Filter Design Using Bond-Wire Inductors

Contact Info

Product

Resources

About