Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling

Castellazzi, Alberto; Fayyaz, Asad; Gurpinar, Emre; Hussein, Abdallah; Li, Jianfeng; Mouawad, Bassem

doi:10.23919/ipec.2018.8507834

Cited by 6 publications

(3 citation statements)

References 12 publications

(12 reference statements)

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“…Although the four devices can be used to realize a full H-bridge, here they are arranged in a half-bridge configuration with a doubled current rating. The assembly-compatible with standard PCB mounting processes [22]-is shown in Figure 1, while its schematic cross-section is represented in Figure 2. Each die is 7.2 × 7.2 mm 2 -large and 0.4 mm-thick and contains one transistor; the two VDMOS couples lie on two separate 40 × 40 mm 2 -large and 1.34 mm-thick direct-bonded copper (DBC) substrates.…”

Section: Power Module Under Investigationmentioning

confidence: 99%

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

et al. 2021

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In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

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Section: Power Module Under Investigationmentioning

confidence: 99%

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

et al. 2021

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“…In addition, the topology is suitable for the use of novel semiconductor technologies on the high-voltage side; in particular, silicon carbide (SiC) MOSFETs can yield important gains in switching frequency capability and converter performance optimization in terms of efficiency and thermal management requirements [14,15]. In the future, the possibility to develop bespoke modules will enhance the potential for disruptive progress in the integration level that can be realistically achieved [16].…”

Section: Conflicts Of Interestmentioning

confidence: 99%

Power Scalable Bi-Directional DC-DC Conversion Solutions for Future Aircraft Applications

Lamantia¹,

Giuliani²,

Castellazzi

2020

Energies

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With the introduction of the more electric aircraft, there is growing emphasis on improving overall efficiency and thus gravimetric and volumetric power density, as well as smart functionalities and safety of an aircraft. In future on-board power distribution networks, so-called high voltage DC (HVDC, typically +/−270VDC) supplies will be introduced to facilitate distribution and reduce the associated mass and volume, including harness. Future aircraft power distribution systems will also very likely include energy storage devices (probably, batteries) for emergency back up and engine starting. Correspondingly, novel DC-DC conversion solutions are required, which can interface the traditional low voltage (28 V) DC bus with the new 270 V one. Such solutions presently need to cater for a significant degree of flexibility in their power ratings, power transfer capability and number of inputs/outputs. Specifically, multi-port power-scalable bi-directional converters are required. This paper presents the design and testing of such a solution, addressing the use of leading edge wide-band-gap (WBG) solid state technology, especially silicon carbide (SiC), for use as high-frequency switches within the bi-directional converter on the high-voltage side.

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“…The issue of reduced performance at low-load conditions emerges as a connoting feature of WBG technology operated at high frequencies, which requires careful and dedicated attention, with a perspective shift in power converter performance assessment from power to energy efficiency, taking into account the most probable operational load conditions [7,8]. Incremental improvement on standard power module assembly technology is proven sufficient to enable significant application gains, up to and including the 3.3 kV voltage class [9,10]. Specific aspects of common-mode capacitance reductions and robust module designs that incorporate statistical analyses of the realistic spread of a device's electro-thermal parameters are highlighted as the main key requirements in the framework of incremental, as opposed to disruptive, progress beyond state-of-the-art technology [11,12].…”

Section: Introductionmentioning

confidence: 99%

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

et al. 2019

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Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of high-temperature electronics, hands-on experience has highlighted a number of gains that can be drawn from this technology even when used as a straightforward drop-in substitute of silicon in established applications and field-proven designs. Incremental in nature, these gains enable interesting progress beyond state-of-the-art forms, which, though not corresponding to the full exploitation of the potential of this technology, are oftentimes sufficient to justify its adoption. With particular reference to renewable energy power conversion and solid-state transformation, in the context of transport applications and incorporating a storage device, this paper reports on the understanding generated over the past few years and points out some specifically tailored technology and circuit design requirements to ensure overall beneficial impact of the adoption of WBG technology.

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Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling

Cited by 6 publications

References 12 publications

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Power Scalable Bi-Directional DC-DC Conversion Solutions for Future Aircraft Applications

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

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