Multi-switch Si-chip structures and on-substrate packaging techniques for improving the electrical performance of power modules

2014 16th European Conference on Power Electronics and Applications

Khadiry

et al. 2014

A generic structure of a Reverse Conducting IGBT (RC-IGBT) that integrates monolithically an IGBT for the forward conduction and a self-firing thyristor for the reverse conduction is proposed. As compared to the conventional RC-IGBT, the structure that we propose doesn't exhibit snap-back in the forward conducting mode [1], [2]. The static and dynamic performances of the structure are investigated in this paper by 2D Sentaurus TM numerical simulations. The proposed structure is then used to design two complementary monolithic power chips, named "Common Anode three-pole" and "Common Cathode three-pole", within the context of "two-chip" integration of static power converter [4]. These two chips are then associated to form a complete inverter. The proposed three-pole common cathode chip uses a P + wall for insulation between the two adjacent RC-IGBT sections. The proposed elementary RC-IGBT uses also the P + wall in order to ensure the thyristor triggering in the reverse conducting mode.

Section: Resultsmentioning

confidence: 72%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A generic Reverse Conducting IGBT structure for monolithic switching cells integration

Lale

2014 16th European Conference on Power Electronics and Applications

Khadiry

et al. 2014

“…1b). The anode electrode of the common anode chip is in contact with the PCB substrate (classical association technique), and the cathode electrode of the discrete RC-IGBT chips (RC-IGBT1 and RC-IGBT2) are in contact with the PCB substrate (flip chip association technique) [1]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Monolithic multi-pole converter device for medium power applications

Khadiry

2014 16th European Conference on Power Electronics and Applications

Richardeau

et al. 2014

Self Cite

This paper presents a monolithic integration approach of a generic power converter (DC/AC or AC/DC (Fig. 1a)). The integration approach is verified for the case of an H-bridge inverter application through 2D simulations. Experimental characterization results are provided for the common anode three-pole chip and for RC-IGBT structures. The work presented in this paper constitutes a continuation for the work previously presented by the same authors [1][2] [3]. The aim of this integration approach is to suppress wire bonds and to have ultra-compact package in order to improve electrical performance as well as reliability of the power modules in medium power applications. S1 S2 a) b) Fig. 1: a) Typical interleaved power converter architecture, b) The H-bridge inverter circuit.

“…In Fig. 3, wire bonds are used for illustration purposes although the authors have studied their replacement by copper clips offering more compactness and less stray inductance [24]- [25]. For the case of an H-bridge inverter, each monolithic multi-terminal chip is composed of only two switches.…”

Section: The Three-chip Integration Conceptmentioning

confidence: 99%

Three Multiterminal Silicon Power Chips for an Optimized Monolithic Integration of Switching Cells: Validation on an H-Bridge Inverter

Lale

IEEE Trans. Electron Devices

Richardeau

et al. 2019

The paper deals with the monolithic integration in silicon of a multi-phase static power converter (DC/AC or AC/DC) for medium power applications from few kilowatts to few tens of kilowatts. The power devices blocking capability is in the range of 600V to 1200V. The authors present an original 3chip integration approach that combines both monolithic integration in silicon and Printed Circuit Board (PCB) packaging process. It allows for taking advantage of both silicon level technology as well as PCB level technology within a limited and well-mastered complexity. Indeed, the multiphase converter is integrated within three new multi-terminal power chips, that are then judiciously packaged on a PCB board so as to minimize both the switching cell stray inductance as well as the impact of voltage variations (dv/dt) across the common mode stray capacitance of the assembly. The static as well as dynamic operating modes of the proposed multi-terminal power chips were validated using 2D-Sentaurus TM TCAD simulations. The realized chips were assembled on a PCB board to realize both classical as well as 3-chip based H-bridge inverters. First characterization results validate the electrical operating modes of the H-bridge inverter realized according to the 3-chip approach.