Multiple bonding effects of 1-methanesulfonyl-piperazine on the two-step processed perovskite towards efficient and stable solar cells

Xin, Yu; Lv, Yinhua; Xue, Bingyan; Wang, Lu; Hu, Wanpei; Liu, Xinhang; Yang, Shangfeng; Zhang, Wen−Hua

doi:10.1016/j.nanoen.2021.106856

Cited by 35 publications

(28 citation statements)

References 52 publications

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“…This shows that trap assisted recombination is effectively inhibited, which can be attributed to the effective passivation of interface traps by the combination of NHS filled in the grain boundary and undercoordinated ions. [ 42,43 ] The process of charge interface separation and transfer was further evaluated by EIS. The Nyquist curve is shown in Figure 4f.…”

Section: Resultsmentioning

confidence: 99%

Grain Boundary Defect Controlling of Perovskite via N‐Hydroxysuccinimide Post‐Treatment Process in Efficient and Stable n–i–p Perovskite Solar Cells

Chen

et al. 2022

Solar RRL

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Nonradiative recombination on perovskite surface and grain boundary largely constrains the efficiency and stability of photovoltaic devices. Surface passivation has proven to be the most effective strategy to suppress photogenerated carrier recombination. Herein, functional N‐hydroxysuccinimide (NHS) is incorporated in perovskite films by suppressing nonradiative losses both in surface and in grain boundary. The NHS molecules are located at the perovskite grain boundary and surface with good compability with the perovskite crystal network, which forms an effective barrier at the grain boundary to prevent the permeation of moisture. Equally important, the interactions between the CO group in NHS and perovskite undercoordinated groups (Pb2+ or Pb clusters) reduce the surface defects of the perovskite, yielding a minimal energy loss. The prolonged lifetime of carriers with NHS‐treated perovskites prevents the carrier quenching at the perovskite grain boundary and interface. As a result, open‐circuit voltage of the solar cell is up to 1.13 V with a power conversion efficiency (PCE) of 22.21%. The stability of the device is also significantly improved, wherein devices with NHS retain 81% of the initial PCE after 1000 h at room temperature.

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Section: Resultsmentioning

confidence: 99%

Grain Boundary Defect Controlling of Perovskite via N‐Hydroxysuccinimide Post‐Treatment Process in Efficient and Stable n–i–p Perovskite Solar Cells

Chen

et al. 2022

Solar RRL

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“…[14][15][16][17][18][19] Passivating the defects at grain boundaries and surface of perovskite film is an effective strategy to reduce E loss . 13,16,18,[20][21][22] Recently, various long-chain alkylamine salts have been proved to effectively reduce nonradiative recombination and improve device performance. 2,[23][24][25] The alkylamine cations can form 2D phases to passivate defects and improve stability of perovskite films, but the uncontrollable orientation of the 2D phases might block the out-ofplane carrier transport in the 3D perovskite film or from the perovskite film to the charge transport layers, leading to low fill factor (FF).…”

Section: Introductionmentioning

confidence: 99%

“…Passivating the defects at grain boundaries and surface of perovskite film is an effective strategy to reduce E loss 13,16,18,20–22 . Recently, various long‐chain alkylamine salts have been proved to effectively reduce nonradiative recombination and improve device performance 2,23–25 .…”

Section: Introductionmentioning

confidence: 99%

Proton‐transfer‐induced in situ defect passivation for highly efficient wide‐bandgap inverted perovskite solar cells

Fang

Jia

Yan

et al. 2022

InfoMat

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Wide-bandgap (≥1.68 eV) inverted perovskite solar cells (PSCs) have been recognized as promising top component cells on the commercial crystalline silicon cell to surpass its Shockley-Queisser efficiency limit. However, the power conversion efficiency (PCE) is dramatically limited by the huge open-circuit voltage (V OC ) loss. Herein, we propose a proton-transfer-induced in situ defect passivation strategy to reduce the nonradiative recombination to minimize the V OC loss. Specifically, a liquid-form neutral amine, 3,4,5-trifluorobenzylamine (TFBA) was added into ethyl acetate (EA) as anti-solvent for the film preparation, which induces proton-transfer from the formamidinium (FA) and methylammonium (MA) in the perovskite precursors to the TFBA. The protonated TFBA exhibits a gradient distribution near the surface of the perovskite film, achieving in situ defect passivation. As a result, TFBA-based 1.68 eV-bandgap inverted PSCs afforded a PCE of 20.39%, one of the highest for cells with this bandgap. Meanwhile, due to the strong interaction between TFBA and the perovskite film, the mixed-halide perovskites demonstrate much better photostability. Our findings offer an effective strategy to passivate defects in PSCs.

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“…[ 7–9 ] In particular, multifunctional molecules are of increasing interest as they can effectively passivate various defects and construct more stable perovskite surfaces by forming stronger Pb–S, Pb–O, and other interactions. [ 10–13 ] Remarkably, PSCs that can successfully pass the stability criteria test of IEC61215:2016 standards have been reported, [ 14 ] which is a huge step toward the industrialization and commercialization of this PV technology.…”

Section: Introductionmentioning

confidence: 99%

An Integrated Bulk and Surface Modification Strategy for Gas‐Quenched Inverted Perovskite Solar Cells with Efficiencies Exceeding 22%

et al. 2022

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Inverted perovskite solar cells (PSCs) prepared by the antisolvent method have achieved power conversion efficiencies (PCEs) of over 23%, but they are not ideal for device upscaling. In contrast, gas‐quenched PSCs offer great potential for upscaling, but their performance still lags behind. Herein, the gas‐quenched films through both surface and bulk modifications are upgraded. First, a novel surface modifier, benzylammonium thiocyanate, is found to allow remarkably improved surface properties, but the PCE gain is limited by the existence of longitudinally multiple grains. Thus, methylammonium chloride additive as a second modifier to realize monolithic grains is further utilized. Such an integrated strategy enables the average open‐circuit voltage of the gas‐quenched PSCs to increase from 1.08 to 1.15 V, leading to a champion PCE of 22.3%. Moreover, the unencapsulated device shows negligible degradation after 150 h of maximum power point operation under simulated 1 sun illumination in N2.

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Multiple bonding effects of 1-methanesulfonyl-piperazine on the two-step processed perovskite towards efficient and stable solar cells

Cited by 35 publications

References 52 publications

Grain Boundary Defect Controlling of Perovskite via N‐Hydroxysuccinimide Post‐Treatment Process in Efficient and Stable n–i–p Perovskite Solar Cells

Grain Boundary Defect Controlling of Perovskite via N‐Hydroxysuccinimide Post‐Treatment Process in Efficient and Stable n–i–p Perovskite Solar Cells

Proton‐transfer‐induced in situ defect passivation for highly efficient wide‐bandgap inverted perovskite solar cells

An Integrated Bulk and Surface Modification Strategy for Gas‐Quenched Inverted Perovskite Solar Cells with Efficiencies Exceeding 22%

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