Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer

Zhao, Yanli; He, Suxiang

doi:10.1016/j.optcom.2006.03.050

Cited by 15 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With the increasing of doping concentration, the punchthrough voltage increases and the breakdown voltage decreases. Figure 7 shows the I – V characteristics with different thicknesses of the charge layer, and we can observe that with the increasing thickness, the punchthrough voltage increases while the breakdown voltage decreases [19, 20]. With the increasing thickness and the doping of charge layer, the electric field in the absorption layer and the grading layer decreases, and it makes the electron more difficult to punch through the layers, so the punchthrough voltage increases, but the electric field in multiplication layer increases with the increased thickness and the doping of charge layer.…”

Section: Resultsmentioning

confidence: 99%

Optimization of InGaAs/InAlAs Avalanche Photodiodes

et al. 2017

View full text Add to dashboard Cite

In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.

show abstract

Section: Resultsmentioning

confidence: 99%

Optimization of InGaAs/InAlAs Avalanche Photodiodes

et al. 2017

View full text Add to dashboard Cite

show abstract

“…In modern optoelectronic fields of fiber communication, astrosurveillance, optical sensor and single photon detection, avalanche photodiodes (APD) are widely applied in the receiving terminal due to their large interior photocurrent gain [1][2][3]. Likewise, for the integrated optical receivers, APD is also an ideal option for its outstanding advantages in size, power dissipation and quantum efficiency [4].…”

Section: Introductionmentioning

confidence: 99%

Low-Noise 3-D Avalanche Photodiodes

Guo

et al. 2016

IEEE Photonics J.

Self Cite

View full text Add to dashboard Cite

In this paper, we present a new 3D structure for InP based avalanche photodiode, aiming at decreasing the excess noise factor. To the best of our knowledge, it is the first time to propose new device designs based on recently developed 3D spatial dead space model in 2014. In addition, we also propose a methodology, the 2D planar absorption distribution projection technique, for further optimizing the 3D model. According to our theoretical simulation results, by combining photonic crystal (PC) and selective area doping, the effective k values of InP and In0.52Al0.48As can be reduced to as low as ~0.19 and as ~0.13, respectively. Meanwhile, the optimal thickness of multiplication region is larger than 0.45 μm, which reduces the tunneling effect. The detailed parameter optimization process, including optics, electronics and material, is comprehensively presented. The examples in this paper also provide a fresh idea for researchers to foretell and design new photodetectors with 3D structure.

show abstract

Theoretical Study of Enhancing the Performance of InP/InGaAs Avalanche Photodiodes with p‐Type‐Doped InP Interposed Layer

Lin,

Zhao,

Zhou

et al. 2024

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

For InP/InGaAs avalanche photodiodes (APD), there are three important performance parameters: mean gain, excess noise factor, and dark current. Reducing excess noise and dark current is an effective way to achieve higher sensitivity and improve the performance of an APD. In this article, an interposed layer is introduced into the InP/InGaAs avalanche photodiode structure. The results considering dead space indicate that the thin interposed layer structure has lower excess noise factor and dark current at the same mean gain compared with conventional APD structure, which is reduced by ≈34% and 11%, respectively, at mean gain . This provides a feasible idea for the construction of high‐performance APD.

show abstract

Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer

Cited by 15 publications

References 22 publications

Optimization of InGaAs/InAlAs Avalanche Photodiodes

Optimization of InGaAs/InAlAs Avalanche Photodiodes

Low-Noise 3-D Avalanche Photodiodes

Theoretical Study of Enhancing the Performance of InP/InGaAs Avalanche Photodiodes with p‐Type‐Doped InP Interposed Layer

Contact Info

Product

Resources

About