N₂O Processing Improves the 4H-SiC:SiO₂ Interface

Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

“…14 Nitrous oxide (N 2 O) can be used as an alternative gas for nitridation, and it would be a preferred gas for use in industry because of its nontoxic property. [15][16][17] Identical chemical structures at the SiC-SiO 2 interface for gate oxides grown in either NO or N 2 O ambient were found by x-ray photoelectron spectroscopy ͑XPS͒ analysis. 17 This is because N 2 O can dissociate into NO, O 2 , and N 2 at temperatures higher than 1000°C.…”

Effects of rapid thermal annealing on nitrided gate oxide grown on 4H-SiC

“…Such effects include a significant reduction in SiC-SiO 2 interface and near interface-trap densities, an increment in metal oxide semiconductor (MOS) field effect transistorÕs channel mobility, an improvement in gate-oxide reliability and in non-equilibrium charge retention time [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In order to employ this high-quality nitrided gate oxide as part of SiC MOS-based devices for high-temperature, high-frequency, high-power, and non-volatile memory applications [14][15][16][18][19][20], it is indispensable for the post-grown oxide undergoes multiple steps of heat treatments and processes.…”

Normally-off 4H-SiC trench-gate MOSFETs with high mobility

“…The fact that gate oxide needs to be formed on the source region which usually has a substantial surface roughness due to the heavy dose nitrogen implantation and high-temperature annealing also gives rise to the concerns of gate oxide reliability. Recently, various approaches have been employed to improve the quality of the MOS interface [2][3][4][5][6][7]. Peak inversion channel mobilities of 50-70 cm 2 /V s [3,4] have been obtained by the nitridation of SiO 2 /SiC interface through nitric oxide (NO) growth or NO annealing.…”