Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon

Acco, S.; Williamson, D. L.; Sark, W.G.J.H.M. van; Sinke, W.C.; Weg, W. F. van der; Polman, A.; Roorda, S.

doi:10.1103/physrevb.58.12853

Cited by 23 publications

(9 citation statements)

References 45 publications

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“…Process I is characterized by an increase in S/S c-Si , starting at values characteristic for the presence of DVs but steadily increasing into the MV and NV ranges. Note that agglomeration of large vacancy clusters during annealing around 300-400 °C has also been reported based on small angle X-ray scattering (SAXS) [76] and nuclear magnetic resonance (NMR) [77], [78]. In our study, FTIR spectroscopy shows that hydrogen effusion starts at around 300 °C (process II) [50], as will become clear from the FTIR data shown in Fig.…”

Section: B Stability Of Open Volume Deficiencies In A-si:h During Ansupporting

confidence: 84%

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Melskens

Eijt

Schouten

et al. 2017

IEEE J. Photovoltaics

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Section: B Stability Of Open Volume Deficiencies In A-si:h During Ansupporting

confidence: 84%

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Melskens

Eijt

Schouten

et al. 2017

IEEE J. Photovoltaics

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“…In addition to the FTIR changes we observe, there is much literature evidence of changes in the structure or H-bonding near our onset temperature of 350°C, including relief of intrinsic stress, 15 an increase in small angle x-ray scattering ͑SAXS͒ signal attributed to hydrogenated nanovoids, 16 and changes in H nuclear magnetic resonance ͑NMR͒ line shape. 17,18 After annealing at 350-400°C, SAXS data indicate the formation about 1.2 nm nanovoids at volume densities of about 0.1% ͑ϳ4 ϫ 10 19 cm −3 ͒, which is near the threshold of our FTIR sensitivity and it is therefore unlikely that the H dressing these nanovoids could be observed by conventional FTIR methods.…”

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confidence: 80%

Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon

Bobela

Branz

Stradins

2011

Applied Physics Letters

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“…The intrinsic SPE rate, v i , is well describe by an Arrhenius-type equation with an activation energy of 2.7 eV and a pre-exponential factor of 4.64x10 8 3 has been found to be well described with an activation energy of 2.7 eV and a pre-exponential factor of 2.2x 10 8 cm 2 /s. [2] Given that SPE and diffusion are both described with a simple Arrhenius equation the diffusion length is related to the distance that the c/a interface has moved, independent of temperature.…”

Section: Theoretical Backgroundmentioning

confidence: 92%

Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy

et al. 2010

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The diffusion and segregation of hydrogen in surface amorphous silicon layers during solid phase epitaxy (SPE) is modeled. The SPE and H concentration profiles from J. Roth et al., Mat. Res. Soc. Symp. Proc. 205, 45 (1992) are used to test H segregation and diffusion models. Excellent agreement is obtained with a trap limited diffusion model. This model has previously been found to describe the diffusion of fluorine well. The H segregation coefficient at the crystalline-amorphous interface is determined at a temperature of 606oC to be 0.064. The possible temperature dependence of the segregation coefficient and its effect on SPE are also discussed

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Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon

Cited by 23 publications

References 45 publications

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon

Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy

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