Nanocrystalline silicon deposition at high rate and low temperature from pure silane in a modified ICP-CVD system

Tian, Lin; Fathi, Ehsan; Tarighat, Roohollah Samadzadeh; Sivoththaman, Siva

doi:10.1088/0268-1242/28/10/105004

Cited by 6 publications

(4 citation statements)

References 20 publications

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“…The XRD pattern of our MoS 2 reveal any diffracted peaks for (002), (103), and (105) planes, confirming that the synthesized MoS 2 material is nanodot type, which is in agreement with the result of MoS 2 nanodots grown by an exfoliation method [15,16]. The peak at 2θ = 55.4˚can be originated from the diffraction of the Si substrate corresponding to (311) plane [17], not from the sample.…”

Section: Methodssupporting

confidence: 87%

Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition

Vuong¹,

Hung²

2018

Comm. in Phys.

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The current work reports a direct synthesis of multi-layer MoS2 nanodots by a chemical vapor deposition method. The morphological, structural and optical properties of the growing MoS2 are investigated by field emission scanning electron microscopy (FESEM), Raman and Photoluminescence (PL) spectroscopy, respectively. High magnification FESEM image reveals a layer of MoS2 nanodots with the average size of about 10 nm. Resonance Raman data exhibits the two active E12g and A1g modes corresponding to in-plane variation of Mo and S atoms centered at 383.3 cm-1 and to out of plane variation of S atoms located at 407.1 cm-1, respectively. The spacing between two peaks is about 23.8 cm-1, which can be used to evaluate the number of MoS2 layer. The Raman spectrum also indicates any intensity enhancement of the A1g peak compared to the E12g peak. This result is elucidated through the quantum confinement effect. The PL emission shows a pronounced peak at 505 nm that is significant blue shift compared to single MoS2 layer. The interpretation of this phenomena is discussed in detail.

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Section: Methodssupporting

confidence: 87%

Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition

Vuong¹,

Hung²

2018

Comm. in Phys.

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“…Radio-frequency (RF) discharge-based PECVD utilizes the capacitive coupling between the electrodes, which excites the precursor gases, induces a chemical reaction, and results in the deposition of the reaction products [18]. PECVD is known to provide a higher film deposition rate compared to conventional CVD through the interaction of the precursor sources with the highly energetic ions and radicals generated in the plasma [13,15,19]. In this work, Ge films were deposited using an in-house assembled simplified RF PECVD reactor by the use of the substrate-electrode direct-contact approach described above.…”

Section: Introductionmentioning

confidence: 99%

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

Vanjaria

Hariharan

Arjunan

et al. 2021

Electronic Materials

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Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

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“…17,18 Plasma assists in the low temperature cracking of the Si and Sn precursors by providing radicals to enhance reactions pathways and thus increases the deposition rates of Si and Sn leading to enhanced incorporation at lower temperatures. 19,20 Further, the step-graded growth approach has been employed to deposit high Sn content epitaxial GeSn films as it allows to gradually relax the builtin strain inside thick layers thereby limiting lattice imperfections and potentially inhibits Sn surface segregation. 21,22 However, to the best of our knowledge, it has not yet been evaluated for the growth of SiGeSn films.…”

mentioning

confidence: 99%

PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

Vanjaria

Arjunan

Salagaj

et al. 2020

ECS J. Solid State Sci. Technol.

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SiGeSn is a promising group IV material to develop the field of silicon photonics. Increasing the tin concentration in the alloy is desired in order to achieve a direct bandgap in the material. This necessitates low temperature growth and proper strain management in the films during growth to prevent tin segregation. In this work, plasma enhanced chemical vapor deposition (PECVD) was used to grow composition graded SiGeSn films at low processing temperatures of 350 °C-380 °C using a simplified PECVD reactor. Polycrystalline films were deposited using a multi-step approach to prevent tin phase separation at higher Sn concentrations by alleviating the strain arising from the incorporation of Sn in the film lattice. Rutherford Back Scattering measurements indicated that films with Sn content of up to 8% without any Sn phase segregation were achieved. The structural and optical properties of the films were analyzed using X-ray diffraction and Raman spectroscopy.

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Nanocrystalline silicon deposition at high rate and low temperature from pure silane in a modified ICP-CVD system

Cited by 6 publications

References 20 publications

Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition

Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

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