Nanocrystallization of amorphous-Ta40Si14N46 diffusion barrier thin films

Abstract

An optimal quasisuperlattice design to further improve thermal stability of tantalum nitride diffusion barriers Evaluation of single-and multilayered amorphous tantalum nitride thin films as diffusion barriers in copper metallization J.

Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications

“…1͑a͒ Ta-N bonding formed regions with less silicon in the TaSiN layer. 9 This can also be explained by the lower formation energy of TaN ͑−120 kJ/ mol͒ compared to TaSi 2 ͑−39 kJ/ mol͒. 14,15 The peak signal of the Si-O bonding at 103.3 eV was not detected in any of the SiN and TaSiN samples.…”

“…7,8 However, with increases in the silicon concentration in the TaSiN layer and under high annealing temperatures, it is well known that phase separation occurs by spinodal decomposition. 9 Consequently, the TaSiN layer is separated into two stable phases: transition metal nitride and covalent silicon nitride. Bicker et al reported that transition metal nitride was separated as crystalline nanoparticles in an amorphous SiN matrix.…”