2014
DOI: 10.1109/led.2014.2313332
|View full text |Cite
|
Sign up to set email alerts
|

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
7
0

Year Published

2015
2015
2022
2022

Publication Types

Select...
8
1
1

Relationship

0
10

Authors

Journals

citations
Cited by 68 publications
(7 citation statements)
references
References 14 publications
0
7
0
Order By: Relevance
“…Therefore, to shrink out the NW diameter increasing attention has been given to the post-growth methods recently. For example, the use of the different etching methods, such as ion-beam sculpting, plasma enhanced and wet etching, are shown to result in the reduction of NW diameters [20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, to shrink out the NW diameter increasing attention has been given to the post-growth methods recently. For example, the use of the different etching methods, such as ion-beam sculpting, plasma enhanced and wet etching, are shown to result in the reduction of NW diameters [20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth Wenyuan Yang 1 , Xianghai Ji 2,3 , Xiaoye Wang 2,3 , Tong Li 1 , Tuanwei Shi 1 , Tao Yang 2,3 and Qing Chen 1 In order to provide the channel material for III-V vertical GAAFETs, several approaches for fabricating vertical nanowires have been demonstrated, consisting of bottom-up methods [4][5][6][7][8][9][10][11] as well as top-down methods [12,13]. Among these approaches, a catalyst-free growth method by metalorganic chemical vapor deposition (MOCVD) [14,15] is a promising candidate for growing nanowires in III-V vertical GAAFETs that can be integrated with the silicon technology.…”
Section: Journal Of Micromechanics and Microengineeringmentioning
confidence: 99%
“…Reactive-ion etching (RIE) is used to create uniform structures with high aspect ratios over large areas. However, the crystalline semiconductor tends to experience structural damage because of high-energy plasma ions 17,18 . This process is more difficult than others due to the different etching characteristics based on the pattern size and shape, and it requires the use of toxic gas facilities and vacuum equipment.…”
Section: This Study Introduces a New Chemical Carving Technique As Anmentioning
confidence: 99%