“…The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth Wenyuan Yang 1 , Xianghai Ji 2,3 , Xiaoye Wang 2,3 , Tong Li 1 , Tuanwei Shi 1 , Tao Yang 2,3 and Qing Chen 1 In order to provide the channel material for III-V vertical GAAFETs, several approaches for fabricating vertical nanowires have been demonstrated, consisting of bottom-up methods [4][5][6][7][8][9][10][11] as well as top-down methods [12,13]. Among these approaches, a catalyst-free growth method by metalorganic chemical vapor deposition (MOCVD) [14,15] is a promising candidate for growing nanowires in III-V vertical GAAFETs that can be integrated with the silicon technology.…”