Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Golka, S.; Pflügl, C.; Schrenk, W.; Strasser, G.; Skierbiszewski, C.; Siekacz, M.; Grzegory, I.; Porowski, S.

doi:10.1063/1.2199445

Cited by 105 publications

(84 citation statements)

References 22 publications

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“…Therefore, this phenomenon seems to be more likely due to trapping effects than tunnelling transport. More recently, in 2006, Golka et al have reported an RTD structure fabricated on bulk GaN showing the same current-voltage behaviour, but they managed to partially recover the peak by annealing the samples at 350 °C, which confirms the hypothesis of trapping phenomenon [9]. In this work, we investigate the electronic transport through AlN/GaN/AlN double barrier structures, with different GaN quantum well thickness.…”

Section: Introductionsupporting

confidence: 54%

Bi‐stable behaviour in GaN‐based resonant tunnelling diode structures

Leconte

Golka

Pozzovivo

et al. 2008

Phys. Status Solidi (c)

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We have investigated the vertical electronic transport in AlN/GaN/AlN double barrier structures grown by plasma‐assisted molecular‐beam epitaxy, with AlN barrier thickness of 0.5 nm and a GaN well thickness varying from 0.5 nm to 2 nm. Two different current levels were observed in different devices in all the samples, the highest one being attributed to leakage through dislocations, and the lower one to tunnelling transport through the barriers. In the sample with a well thickness of 0.5 nm, we observed a bi‐stable behaviour, with an apparent negative differential resistance in the current‐voltage characteristic when scanning the voltage from negative to positive bias. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionsupporting

confidence: 54%

Bi‐stable behaviour in GaN‐based resonant tunnelling diode structures

Leconte

Golka

Pozzovivo

et al. 2008

Phys. Status Solidi (c)

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“…The existence of defects such as charge traps and screw dislocations has led to the need for systematic verification of the origin of negative differential resistance (NDR) features. [13][14][15][16][17] Another important characteristic of AlGaN/GaN heterostructures is the large built-in electrostatic fields due to both spontaneous and piezoelectric polarization which alter the current-voltage (I-V) characteristics significantly. Recent advances in growth technology have reduced threading dislocation densities substantially to allow repeatable measurement of wurtzite and cubic AlGaN RTDs [18][19][20][21][22][23] and sequential tunneling devices.…”

Section: Introductionmentioning

confidence: 99%

Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices

Grier

Valavanis

Edmunds

et al. 2015

Journal of Applied Physics

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We investigate electron transport in epitaxially grown nitride-based resonant tunneling diodes (RTDs) and superlattice sequential tunneling devices. A density-matrix model is developed, and shown to reproduce the experimentally measured features of the current-voltage curves, with its dephasing terms calculated from semi-classical scattering rates. Lifetime broadening effects are shown to have a significant influence in the experimental data. Additionally, it is shown that the interface roughness geometry has a large effect on current magnitude, peak-to-valley ratios and misalignment features; in some cases eliminating negative differential resistance entirely in RTDs. Sequential tunneling device characteristics are dominated by a parasitic current that is most likely to be caused by dislocations; however, excellent agreement between the simulated and experimentally measured tunneling current magnitude and alignment bias is demonstrated. This analysis of the effects of scattering lifetimes, contact doping and growth quality on electron transport highlights critical optimization parameters for the development of III-nitride unipolar electronic and optoelectronic devices. V C 2015 AIP Publishing LLC. [http://dx

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“…It has been shown that a non-polar orientation should improve resonant tunneling when compared to a polar one, and that AlN barriers, compared to AlGaN ones, will result in higher peakto-valley ratios (Carnevale et al, 2012). This absence of reproducibility has been largely attributed to the charge trapping at dislocation sites (Golka et al, 2006). Furthermore, leakage paths through dislocations may lead to relatively small peak-to-valley ratios (1.03, Li et al), pushing the need for dislocation free nitride structures.…”

Section: Introductionmentioning

confidence: 99%