2014
DOI: 10.1109/jmems.2014.2313462
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NEMS by Sidewall Transfer Lithography

Abstract: -A batch fabrication process for nano-electromechanical systems (NEMS) based on sidewall transfer lithography (STL) is demonstrated. STL is used to form nanoscale flexible silicon suspensions entirely by conventional photolithography. A two-step process for combining microscale and nanoscale features is used to fabricate double-ended and single-ended electrothermal actuators with a minimum feature width of 100 nm and an aspect ratio of 40 : 1. All devices are fabricated by deep reactive ion etching in 4.5 µm t… Show more

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Cited by 13 publications
(13 citation statements)
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“…This technology only uses i-line stepper lithography to define NWs. This technique is based on the conformal deposition of silicon nitride film by low pressure chemical vapor deposition (LPCVD) over a previously patterned step in dummy gate α-Si [57,70,71] as shown in Figure 2a-j. With this technique, a minimum 10 nm width NW could be generated depending on the width of the spacer, which is determined by the thickness of deposited silicon nitride.…”
Section: Side Wall Transfer Lithography (Stl)mentioning
confidence: 99%
“…This technology only uses i-line stepper lithography to define NWs. This technique is based on the conformal deposition of silicon nitride film by low pressure chemical vapor deposition (LPCVD) over a previously patterned step in dummy gate α-Si [57,70,71] as shown in Figure 2a-j. With this technique, a minimum 10 nm width NW could be generated depending on the width of the spacer, which is determined by the thickness of deposited silicon nitride.…”
Section: Side Wall Transfer Lithography (Stl)mentioning
confidence: 99%
“…Coupling must be weak to achieve a bandwidth suitable for applications such as intermediate frequency (IF) filtering. Mechanical coupling elements must then be nanostructured [43][44][45][46]. Electrode gaps must also be very small for realistic input and output impedance, further complicating fabrication [47][48][49][50].…”
Section: Introductionmentioning
confidence: 99%
“…However, small electrode gaps are needed to reduce matching loads, and parasitic coupling to the substrate must be compensated (Abdolvand et al 2004). Sub-micron gaps have been obtained using the HARPSS process (Arellano et al 2008) or movable electrodes (Liu and Syms 2014).…”
Section: Introductionmentioning
confidence: 99%