NESS: new flexible Nano-Electronic Simulation Software

Berrada, Salim; Dutta, Tapas; Carrillo-Nuñez, Hamilton; Duan, Meng; Adamu-Lema, Fikru; Lee, Je-Hyun; Georgiev, Vihar P.; Medina-Bailón, Cristina; Asenov, A.

doi:10.1109/sispad.2018.8551701

Cited by 22 publications

(21 citation statements)

References 15 publications

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“…The charge distribution is obtained after reaching self-consistency between 3D Poisson and NEGF transport equations. [10] This is illustrated in Figure 1a. Figure 1b shows a schematic diagram for a device that we have considered in this work.…”

Section: Nano-electronic Simulation Softwarementioning

confidence: 93%

“…Figure 4 shows the transfer characteristic of a square NWT having a cross-sectional area of 9 nm 2 and gate length of 10 nm. The simulations were performed in a ballistic transport approximation, as, for smaller channel lengths, the scaling was expected to play a relatively smaller role [10]. The comparison showed that the on-current could be significantly different if calibrated effective masses were used instead of the bulk masses.…”

Section: Mobility: a Kubo-greenwood Studymentioning

confidence: 99%

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Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

et al. 2019

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The use of bulk effective masses in simulations of the modern-day ultra-scaled transistor is erroneous due to the strong dependence of the band structure on the cross-section dimensions and shape. This has to be accounted for in transport simulations due to the significant impact of the effective masses on quantum confinement effects and mobility. In this article, we present a methodology for the extraction of the electron effective masses, in both confinement and the transport directions, from the simulated electronic band structure of the nanowire channel. This methodology has been implemented in our in-house three-dimensional (3D) simulation engine, NESS (Nano-Electronic Simulation Software). We provide comprehensive data for the effective masses of the silicon-based nanowire transistors (NWTs) with technologically relevant cross-sectional area and transport orientations. We demonstrate the importance of the correct effective masses by showing its impact on mobility and transfer characteristics.

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Section: Nano-electronic Simulation Softwarementioning

confidence: 93%

Section: Mobility: a Kubo-greenwood Studymentioning

confidence: 99%

Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

et al. 2019

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“…In extremely short channels with pure ballistic transport, fully quantum transport models based e.g. on the NEGF formalism with scattering mechanisms may be used for more reliable predictions [28], [29].…”

Section: (B)/(d) the High Enhancement Inmentioning

confidence: 99%

Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

Medina-Bailón

Sadi

Nedjalkov

et al. 2019

IEEE Electron Device Lett.

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We have studied the impact of the cross-sectional shape on the electron mobility of n-type silicon nanowire transistors (NWTs). We have considered circular and elliptical cross-section NWTs including the most relevant multisubband scattering processes involving phonon, surface roughness, and impurity scattering. For this purpose, we use a flexible simulation framework, coupling 3D Poisson and 2D Schrödinger solvers with the semi-classical Kubo-Greenwood formalism. Moreover, we consider cross-section dependent effective masses calculated from tight binding simulations. Our results show significant mobility improvement in the elliptic NWTs in comparison to the circular one for both [100] and [110] transport directions, especially when surface roughness scattering is included.

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“…To describe electron transport in Si NWFETs, the effective mass Hamiltonian calibrated with DFT band structures is used in this study. The electron density and current are calculated by solving self-consistently Poisson and the coupled mode-space Non-Equilibrium Green's Function (NEGF) transport equations, which are implemented in Nano-Electronic Simulation Software (NESS) [16]. Hard wall boundary conditions are employed at the Si NW surface.…”

Section: Transport Simulationmentioning

confidence: 99%

Nanowire FETs

Lee¹,

Medina-Bailón²,

Berrada³

et al. 2018

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

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In this work, we study 2.1 nm-diameter uniaxial strained Si gate-all-around nanowire field-effect transistors, focusing on the electron mobility and the variability due to random discrete dopants (RDDs). Firstly, we extract the electron effective masses under various strains from Density Functional Theory (DFT) simulations. Secondly, we explore the impact of strain on the electron mobility in the Si nanowire using the Kubo-Greenwood formalism with a set of multi-subband phonon, surface roughness, and ionized impurity scattering mechanisms. Finally, we perform quantum transport simulations to investigate the effect of RDDs on the threshold voltage and the ON-state current variation.

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NESS: new flexible Nano-Electronic Simulation Software

Cited by 22 publications

References 15 publications

Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

Nanowire FETs

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