Neutron radiation effects in GaAs ion-implanted metal-semiconductor field-effect transistors

Janousek, Bruce K.; Yamada, W.E.; Krantz, Richard; Bloss, Walter L.

doi:10.1063/1.339901

Cited by 27 publications

(7 citation statements)

References 20 publications

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“…As discussed in Ref. [16], implanted devices typically have a gaussian carrier profile so that particle irradiation not only removes carriers but also decreases the channel width because the carrier removal rate increases with decreasing carrier density [13,16]. With this uncertainty, the value of CY reported by Burke et al is comparable to that measured here.…”

Section: Zzb Apparatus and Measurementssupporting

confidence: 88%

Low temperature proton irradiation of GaAs MESFETs

Shaw

Xapsos

Weaver

et al. 1993

IEEE Trans. Nucl. Sci.

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0.35 pm N, = 5~1 0 '~ cm-' Abstract GaAs MESFETs and resistors were irradiated with 3MeV protons at irradiation temperatures ( T d ranging from 100 K 5 T, S 300 K. It was found that irradiation at T, < 225 K was about 2.5 times more effective at degrading the DC electrical parameters of the MESFETs than irradiation at room temperature. Isochronal annealing experiments showed that there was no apparent recovery of the radiation induced degradation for annealing temperatures TANNU < 225 K.Both the MESFETs and resistors exhibited a broad annealing stage near 270 K. The implications for spaceborne GaAs devices operated at cryogenic temperature are discussed.

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Section: Zzb Apparatus and Measurementssupporting

confidence: 88%

Low temperature proton irradiation of GaAs MESFETs

Shaw

Xapsos

Weaver

et al. 1993

IEEE Trans. Nucl. Sci.

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“…3b) showed a good agreement with a Gaussian distribution of the form [15] 3b) showed a good agreement with a Gaussian distribution of the form [15] …”

Section: Channel Carrier Degradationmentioning

confidence: 73%

“…In the case of ion implanted MESFETs the threshold voltage shift modeling was introduced for the neutron irradiated ones [15]. Other device parameters such as the transconductance, the drain saturation current, the noise and frequency response were also considered.…”

Section: Introductionmentioning

confidence: 99%

On the ?-Particle Irradiation Effects in MESFETs

Papastamatiou

Arpatzanis

Papaioannou

et al. 2000

phys. stat. sol. (a)

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a-particle irradiation investigations have been carried out on various structure GaAs metal±semiconductor field-effect transistors. The device characteristics were measured before irradiation and after a-particle irradiation with fluences ranging from 5 Â 10 10 to 3 Â 10 12 cm ± ±2 . The carrier removal rate was found to be independent of the doping level as determined from Schottky diodes and device parameters. Five traps were found to be introduced by irradiation. Two of them were found to determine the temperature dependence of drain current. The threshold voltage shift was modeled taking into account the degradation of the channel carrier removal, the gate barrier height and the channel±substrate space charge region width.

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“…The sensitivity of various parameters as a function of neutron flux is shown in Fig. I, 26 where experimental and simulation results are compared for MESFET and JFET technology. Significant changes in the parameters do not occur until the 10 -10 neutrons/cm 2 range.…”

Section: 11conventional Electronic Devicesmentioning

confidence: 99%

Radiation Effects in Iii-v Semiconductor Electronics

Weaver

McMorrow

Cohn³

2003

Int. J. Hi. Spe. Ele. Syst.

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Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are also discussed here. Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles; this sensitivity becomes more significant as clock rates and operating speeds increase.

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Neutron radiation effects in GaAs ion-implanted metal-semiconductor field-effect transistors

Cited by 27 publications

References 20 publications

Low temperature proton irradiation of GaAs MESFETs

Low temperature proton irradiation of GaAs MESFETs

On the ?-Particle Irradiation Effects in MESFETs

Radiation Effects in Iii-v Semiconductor Electronics

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