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Neutron radiation investigations have been carried out on ion-implanted GaAs metalsemiconductor field-effect transistors (MESFETs), Device characteristics were measured before irradiation and following neutron irradiations with fluences from 5 X 1013 to 2 X 10 15 n/cm 2 , At 5 X 1013 n/cm 2 , the device degradation is negligible, while at 2x 10 15 n/cm 2 the threshold voltage shift was 0,7 V and the device transconductance was 30% of its original value, Degradation parameters needed to explain these results are larger than what has been previously reported; this discrepancy is, in part, due to the nonuniform doping profiles in the FET channeL The details of a new model applicable to nonuniform carrier distributions and to density dependent carrier removal rates are presented and results compared to those in the literature, A carrier removal rate of approximately 20 cm -1 is required to explain the degree of observed device degradation, 1676