New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

Cittanti, Davide; Vico, Enrico; Bojoi, Radu

doi:10.1109/access.2022.3174777

Cited by 22 publications

(9 citation statements)

References 81 publications

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“…The virtual equivalent diode in GaN features a voltage drop that is higher than the body diode of a Si MOSFET. It does not show a reverse recovery charge, Q rr (no minority carriers are involved in the conduction), at the turn-off [21].…”

Section: Gan Power Devices: Classifications and Operationmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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Section: Gan Power Devices: Classifications and Operationmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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“…A new paradigm is therefore emerging in the automotive powertrain industry, 37,38 making it necessary to identify the technological characteristics of WBG semiconductors compared to Si, thereby identifying their strengths and weaknesses. 39,40 In many research works, WBG devices, 41 substrate technology, 39 device operation mode, 42 conduction and switching losses, 43,44 reverse conduction capacity and operating ranges, 45 have been analyzed, among others. Such information is supplemented in this comprehensive literature review that is focused on WBG devices of electric vehicle powertrains and changing trends and usage over the medium-to-longterm, 1,46 highlighting the most suitable SiC and GaN alternatives for future electric vehicles.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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“…P OWER electronic converter systems with Wide-Bandgap (WBG) semiconductors are key to achieve ever higher efficiencies and power densities, enabling cost-, volume-and weight-efficient conversion of energy within the electrical and/or between electrical and mechanical domain. The very fast switching transitions (high dv/dt) associated with the use of WBG semiconductors help to minimize the semiconductor losses occurring during hard switching [1], [2]. As shown, e.g., in [3], the fast switching transitions demand a significantly increased measurement Bandwidth (BW) up to several hundred MHz to measure the signals of interest, e.g., the Drain-Source (DS) and/or Gate-Source (GS) voltages.…”

Section: Introductionmentioning

confidence: 99%

High-Bandwidth Isolated Voltage Measurements With Very High Common Mode Rejection Ratio for WBG Power Converters

Niklaus

Bonetti

Stäger

et al. 2022

IEEE Open J. Power Electron.

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Galvanically isolated voltage measurements are becoming increasingly important for the characterization of converter systems with fast switching Wide-Bandgap (WBG) semiconductors. A very high Common Mode Rejection Ratio (CMRR) > 80 dB for frequencies up to several tens of MHz is required to accurately measure, e.g., the high-side gate-source or drainsource voltage in a half-bridge, or voltages on floating potentials as, e.g., found in multi-level converters. Common to all listed measurement scenarios is the fast changing reference potential, which acts as Common Mode (CM) disturbance. This article derives the minimum necessary CMRR at different frequencies to constrain the time-domain measurement error below a certain limit. Thereby, only the switched voltage and the voltage transition rate (dv/dt) of the CM disturbance are to be considered and not the actual converter switching frequency f sw . Afterwards, a galvanically isolated measurement system with a CMRR > 100 dB up to 100 MHz and an analog measurement bandwidth of 130 MHz is presented. Critical design aspects to achieve this performance are investigated. Compared to commercially available isolated voltage probes, the presented measurement system does not require any additional equipment like an oscilloscope to perform and visualize measurements, since the data is already digitized/sampled and thus can be transmitted directly to a host device (e.g., computer or monitoring system) with corresponding Graphical User Interface (GUI) software. Experimental verification in frequency-and timedomain confirms that the performance is on par with the best commercially available isolated voltage probes.

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New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

Cited by 22 publications

References 81 publications

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

The role of power device technology in the electric vehicle powertrain

High-Bandwidth Isolated Voltage Measurements With Very High Common Mode Rejection Ratio for WBG Power Converters

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