New laboratory EUV reflectometer for large optics using a laser plasma source

Loyen, L. van; Boettger, Thomas; Braun, Stefan; Mai, H.; Leson, Andreas; Scholze, Frank; Tuemmler, Johannes; Ulm, G.; Legall, Herbert; Nickles, P. V.; Sandner, W.; Stiel, H.; Rempel, C.; Schulze, Mirko; Brutscher, Joerg; Macco, Fritz; Muellender, S.

doi:10.1117/12.485042

Cited by 21 publications

(11 citation statements)

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“…The specular reflectance of the mirrors has been characterized by X-ray reflectometry under grazing incidence with Cu-Kα radiation (λ = 0.154 nm, Bruker D8) and at near-normal incidence with EUV radiation (λ = 12-15 nm, laboratory reflectometer based on a laser produced plasma source [19]). …”

Section: Reflectance Measurementsmentioning

confidence: 99%

Specific aspects of roughness and interface diffusion in non-periodic Mo/Si multilayers

et al. 2014

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Most of the currently used reflective coatings for EUV and X-ray mirrors are periodic nanometer multilayers. Depending on the number of periods and the absorption in the multilayer stack a certain band width of the incoming radiation can be reflected. In order to increase the integral reflectance or to accept larger ranges of incidence angles, non-periodic multilayers are needed. With the transition from periodic to non-periodic multilayers new challenges arise for the deposition process. Since the reflectance spectra are sensitive to every single layer thickness a precise coating control and an exact knowledge of the interface reactions are required. Furthermore substrate roughness influences the reflectance spectra. With an advanced coating process using additional ion bombardment during thin film growth the integrated reflectance of broadband mirrors can be conserved even for an initial substrate roughness of about 0.7 nm rms

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Section: Reflectance Measurementsmentioning

confidence: 99%

Specific aspects of roughness and interface diffusion in non-periodic Mo/Si multilayers

et al. 2014

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“…In literature, several descriptions of laboratory scale spectrophotometers were published [1][2][3][4] . Based on the typical arrangement of accelerator setups, EUV-reflectometers are structured in a radiation source, a monochromator separating a small wavelength interval from the available spectrum, and a detector monitoring the power of the reflected monochromatic beam.…”

Section: Polychromatic Measurement Principlementioning

confidence: 99%

Novel compact spectrophotometer for EUV optics characterization

et al. 2006

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For the development of pioneering optical components for beam collimation and shaping, test set-ups are indispensable for characterizing the reflectance and transmittance over the relevant spectral range. Since radiation sources with a sufficiently high brilliance were only available at synchrotron devices up to now, the characterization of the spectral characteristics was concentrated at large-scale research institutions. In contrast to that, a strong need can be noticed for innovative small and medium companies to use compact and flexible in-house spectrophotometers accelerating product development.In the framework of the present collaboration, a novel table-top spectrophotometer for measuring the spectral characteristics of medium scale EUV-optics (up to 50mm diameter) in the spectral range from 11 to 20nm was developed. The device is based on a new polychromatic measurement principle using the direct irradiation of a compact EUV-tube for illuminating the sample and a broad-band spectrometer for detecting the probe and reference beam. The samples can be investigated under different angles of incidence and in respect to lateral dependencies. In the present paper, first results with different reflecting and transmitting EUV-optical elements demonstrate flexibility, and the achieved spectral resolution and accuracy is presented.

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“…1. It was developed at Max-Born-Institute (MBI) as EUV light source (10 nm to16 nm) for an laboratory EUV-reflectometer 10 . This reflectometer consisting of EUV plasma light source, monochromator and goniometer is scheduled to characterize multilayer optics for EUV-lithography.…”

Section: Au Lpp Source For Reflectometrymentioning

confidence: 99%

Characterization of a laser-produced plasma source for a laboratory EUV reflectometer

et al. 2003

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With the development of EUV lithography there is an increasing need for high-accuracy at-wavelength metrology. In particular, there is an urgent need for metrology at optical components like mirrors or masks close to the production line. Sources for metrology have to fit different demands on EUV power and spectral shape than sources for steppers systems. We present the results of the radiometric characterization of a laser produced plasma (LPP)source, newly developed at Max-Born-Institute Berlin for use in an EUV reflectometer. It is operated with a highpower pointing-stabilized laser beam (energy per pulse up to 700 mJ, 10 ns pulse duration, < ± 25 µrad pointing stability) at 532 nm which is focussed on a rotating Au target cylinder. The incident angle of the laser beam is set to 63°, the detecting angle 55° to the target normal. The source has been characterized regarding spectral photon flux, source size and source point stability. Two independently calibrated instruments, an imaging spectrometer and a double multilayer tool for in-band power measurements were used to obtain highly reliable quantitative values for the EUV emission of the Au-LPP source. Both instruments were calibrated by Physikalisch-Technische Bundesanstalt in its radiometry laboratory at the electron storage ring BESSY II. We obtained a source size of 30 µm by 50 µm (2σ horizontal by vertical) and a stability of better than 2σ=5 µm horizontally and 2σ=9 µm vertically. A spectral photon flux of 1*10 14 /(s sr 0.1 nm) at 13.4 nm at a laser pulse energy of 630 mJ is obtained. The shot-to-shot stability of the source is about 5% (1σ) for laser pulse energies above 200 mJ. For pulse energies between 200 mJ and 700 mJ, there is a linear relation between laser pulse energy and EUV output. The spectrum shows a flat continuos emission in the EUV spectral range, which is important for wavelength scanning reflectometry. High stability in total flux and spectral shape of the plasma emission as well as low debris was only obtained using a new target position for each shot. There is also a trade off between source size and EUV power. For a slightly defocused laser, an increase in EUV power up to a factor of two is obtained, while the source size also increases by about a factor of two. It is shown that an Au-LPP source provides spectrally flat reproducible emission with sufficient power at low debris conditions for the operation of a laboratory based EUV reflectometer. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/23/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Proc. of SPIE Vol. 5037 671 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/23/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Proc. of SPIE Vol. 5037 675 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/23/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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New laboratory EUV reflectometer for large optics using a laser plasma source

Cited by 21 publications

References 0 publications

Specific aspects of roughness and interface diffusion in non-periodic Mo/Si multilayers

Specific aspects of roughness and interface diffusion in non-periodic Mo/Si multilayers

Novel compact spectrophotometer for EUV optics characterization

Characterization of a laser-produced plasma source for a laboratory EUV reflectometer

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