New oxyfluoride lead-free ferroelectric relaxors in the BaTiO3–BaZrO3–CaLiF3 system

Dielectric Property of Polycrystalline ZrO<SUB>2</SUB> Substituted BaTi<SUB>2</SUB>O<SUB>5</SUB> Prepared by Arc-Melting

“…The solubility limit of ZrO 2 in BT 2 Z may be about y ¼ 0:060. Since the ionic radius of Zr 4þ (0.072 nm) is larger than that of Ti 4þ (0.0605 nm), 18) Zr 4þ substituted in Ti 4þ site would enlarge the TiO 6 octahedra and result in the increase in lattice parameters. Figure 4 shows the bulk XRD patterns of polycrystalline BT 2 Z.…”

Dielectric Properties of Ba(Ti0.85Zr0.15)O3Film Prepared by Metalorganic Chemical Vapor Deposition

“…In the case of Ba(Ti 1Àx Zr x )O 3 bulk sintered materials, the temperature dependence of " 0 can be classified into three types depending on x. 18,19) At x ¼ 0 to 0.1, the temperature dependence of " 0 peaks obeys the Curie-Weiss law. At x ¼ 0:26 to 0.4, the materials show the relaxor behavior.…”

Microstructure and Electrical Properties of Fluorides Added PMNT Ceramics

“…Lin-Hong Cao et al fluoride, moreover, had already been used with success to decrease sintering temperature of perovskite materials such as KTa 1-x Nb x O 3 (KTN) [7], BaTiO 3 [8,9], CaZrO 3 [10] ceramics, which sintering temperature can be lowered by 300-500 • C. However, fluorides such as BaLiF 3 and (CaF 2 + LiF) had been added to BaTiO 3 [11] and BaTiO 3 -BaZrO 3 [12,13] ceramics for forming oxyfluoride solid solutions, the fluorides are good way to decrease sintering temperature and improve the dielectric properties of these ceramics. Early studies [14][15][16][17] show that LiF or MgF 2 addition is effective to lower the sintering temperature of PMN-PT ceramics, and improve dielectric and piezoelectric properties accordingly, but the role of CaF 2 addition is contrary.…”