New quaternary thallium indium germanium selenide TlInGe 2 Se 6 : Crystal and electronic structure

Khyzhun, O.Y.; Parasyuk, O.V.; Tsisar, O.V.; Піскач, Л. В.; Myronchuk, G.L.; Levytskyi, Volodymyr; Babizhetskyy, Volodymyr

doi:10.1016/j.jssc.2017.07.014

Cited by 13 publications

(9 citation statements)

References 42 publications

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“…Similar peculiarity of the valence band by the Se 4p states is typical for the related quaternary selenide, TlInGe2Se6, as it established in Ref. [31]. It is worth mentioning that one can also expect substantial contributions of the Tl s, Sn d, and Ga p electronic states to the valence band of the TlGaSn2Se6 compound, however, the present available facilities do not allow for recording the energy distribution of these states by our group.…”

Section: Xps and Xes Datasupporting

confidence: 75%

“…From the data listed in Table 4, the difference parameter ∆ Tl-Se in the TlGaSn 2 Se 6 alloy is equal to 64.19 ± 0.5 eV. This value is very close to that of the difference parameter ∆ Tl-Se for the related selenide TlInGe 2 Se 6 , namely 64.1 eV [31]). This means that the iconicity degree of the chemical Tl-Se bonds in the TlGaSn 2 Se 6 compound corresponds to that in TlInGe 2 Se 6 .…”

Section: Xps and Xes Datasupporting

confidence: 67%

“…[40]. In addition, the impact of bombardment with middle-energy Ar + ions on the XPS spectra of the TlInGe 2 Se 6 alloy surface was also within the scope of the present work, because such treatment is regularly used in epitaxial technologies [31].…”

Section: Methodsmentioning

confidence: 92%

“…When testing the formation of the phases of other compositions, a 1-1-2-6 series of compounds was established. The TlInSe 2 -GeSe 2 system features the TlInGe 2 Se 6 compound that crystallizes in its own structure type (SG R3) [31]. Two other compounds were found in the similar sulfur-containing system, TlInGe 2 S 6 (SG R3) [32] and a 1-1-3-8 composition (TlInGe 3 S 8 (SG P2 1 /c) [33]).…”

Section: Introductionmentioning

confidence: 99%

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Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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Abstract:The studies of the laser operated third order nonlinear optical features of novel TlGaSn 2 Se 6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m 2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar + ions on the XPS spectra of the TlInSn 2 Se 6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn 2 Se 6 We have established that for the TlGaSn 2 Se 6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn 2 Se 6 crystal in advanced optoelectronic laser operated devices.

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Section: Xps and Xes Datasupporting

confidence: 75%

Section: Xps and Xes Datasupporting

confidence: 67%

Section: Methodsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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“…Під час перевірки можливості утворення сполук іншого складу в Tl-вмісних системах ми вперше виявили нову тетрарну сполуку TlInGe 2 Se 6 (ПГ R3) [13], яка утворюється в квазіпотрійній системі Tl 2 Se-In 2 Se 3 -GeSe 2 . Згодом знайдено ще дві сполуки TlInGe 2 S 6 , TlGaSn 2 Se 6 , що кристалізуються в структурному типі TlInGe 2 Se 6 [14,15].…”

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Phase equilibria in Tl2Se–In2Se3–GeSe2 system at 520 K

Tsisar¹,

Піскач²,

Babizhetskyy³

et al. 2018

Visnyk Lviv Univ. Ser. Chem.

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За результатами рентгенофазового аналізу побудовано ізотермічний переріз діаграми стану квазі-потрійної системи Tl 2 Se-In 2 Se 3 -GeSe 2 при 520 K. Підтверджено існування п'яти тернарних та двох тетрарних сполук. Нових сполук не знайдено. Система характеризується утворенням твердих розчинів незначної протяжності на основі вихідних бінарних сполук. Найбільшу область гомогенності має твердий розчин на основі тернарної сполуки TlInSe 2 (до 25 мол. % GeSе 2 ) вздовж квазібінарного перерізу TlInSе 2 -GeSе 2 . Протяжність решти твердих розчинів не перевищує 1 мол. % при 520 K.Ключові слова: квазіпотрійна система, ізотермічний переріз, фазові рівноваги, кристалічна структура.

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TlInGe2S6, A Prospective Nonlinear Optical Material: First-Principles DFT Calculations of the Electronic Structure and Optical Properties

Lavrentyev

Gabrelian

et al. 2018

Journal of Elec Materi

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New quaternary thallium indium germanium selenide TlInGe 2 Se 6 : Crystal and electronic structure

Cited by 13 publications

References 42 publications

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

Phase equilibria in Tl2Se–In2Se3–GeSe2 system at 520 K

TlInGe2S6, A Prospective Nonlinear Optical Material: First-Principles DFT Calculations of the Electronic Structure and Optical Properties

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