Newly developed RELACS materials and processes for the 65 nm node and beyond

Abstract

We have developed a new ArF-RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) material called AZ-LExp.R720. The principle and process procedure of LExp.R720 are almost identical to those previously developed with KrF lithography. The extent of crosslinking reactions and the mobility balance of chemical components at the boundary between resist and the RELACS film is adjusted to ArF resist chemistry. LExp.R720 can vary shrinkage from 10 to 40nm by controlling the process conditions, mainly the mixing bake temperature. The amount of shrinkage is independent of pattern pitch and focus. We confirmed that pattern profile, lithography margin, CD uniformity, etching resistance, and pattern defects were not deteriorated by the RELACS process with deionized water development. L.ExpR720 was able to get an amount of shrinkage with several of ArF resists, which has commercial applications. In conclusion, we believe that LExp.R720 is extremely useful for 65 nm node and next generation devices.

Advanced CD Control Technology for 65-nm Node Dual Damascene Process

“…Via CD control has been mainly performed by application of lithographic tools. Several shrink processes [13]- [15] are commonly adopted for manufacturing since required via size becomes smaller than the limitation from optical lithography performance and reducing via size without lithography tool investments is advantageous in cost. A shrink process using thermal flow is very simple and a low cost process, but the amount of CD shift is strongly dependent on pattern arrangement.…”

Newly Developed Resolution Enhancement Lithography Assisted by Chemical Shrink Process and Materials for Next-Generation Devices

“…At present, resolution enhancement lithography assisted by chemical shrink (RELACS) is the most practical resist shrinkage technology in chemical mechanisms. [1][2][3][4] Furthermore, several other shrink processes have been proposed recently to meet the market demand. [5][6][7][8][9] The lithography roadmap of the development phase and variations in the demand for shrinkage amount are shown in Fig.…”

Extension of 193nm Lithography by Chemical Shrink Process

“…Chemical shrink is a well-known process which gives simple process with low CoO (cost of ownership) to fabricate small contact hole and narrow trench patterns [3]. Based on these advantages, chemical shrink materials have been widely used in semiconductor device production.…”