Nickel silicidation techniques for strained Si1−xGex, Si1−x−yGexCy, and Si1−yCy alloys material-device applications

High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1−xGex

“…The NiSi was reported to be the lowest sheet-resistivity phase (12-14 µΩ-cm) among all existing Ni silicides, 6,16 while NiSi 2 has a resistivity more than 3 times higher. Additionally, the formation of NiSi 2 is accompanied by dramatic morphological changes; the silicide particles coarsen and thicken until the film is no longer continuous, and most of the surface is only poorly conductive Si.…”

“…Among the silicides, nickel silicide is of particular interest because of its low resistivity, large-formation temperature window, and low-Si consumption characteristics. 1 Lowresistivity nickel germanosilicide has been grown on low bandgap, high mobility, epitaxial Si 1-x Ge x , [2][3][4][5][6] but the details of its formation, stability, and morphological evolution remain far from complete.…”