Noise analysis in devices under nonlinear operation

Cappy, A.; Danneville, F.; Dambrine, Gilles; Tamen, B.

doi:10.1016/s0038-1101(98)00261-5

Cited by 20 publications

(21 citation statements)

References 13 publications

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“…This model has been used to describe the modulation of shot noise in diodes [3], [4] in circuit simulation and has been recently applied to the modulation of microscopic noise sources in device simulation [11]. This model applies when the correlation time of a noise process is much shorter than the period of an applied largesignal bias and is applicable to microscopic diffusion noise and GR noise phenomena.…”

Section: ) Modulated Stationary Noise Modelmentioning

confidence: 99%

“…This model applies when the correlation time of a noise process is much shorter than the period of an applied largesignal bias and is applicable to microscopic diffusion noise and GR noise phenomena. Consider a noise process given by (10) where is the modulating function described by (11) and is an instantaneous function of the solution variables and is a unit stationary noise source with (12) where is a random phase angle and . It can be shown that the CSD between noise phasors at sideband frequencies and is then [3] (13)…”

Section: ) Modulated Stationary Noise Modelmentioning

confidence: 99%

“…The IFM was extended to partial differential equation (PDE)-based semiconductor device simulation [10]. These techniques were then extrapolated for the case of device simulation of cyclostationary noise under periodic steady-state conditions [1], [11]. In [12], the authors present simulation results for microscopically cyclostationary trap-assisted GR noise sources.…”

Section: Introductionmentioning

confidence: 99%

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Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Sanchez

Bosman

Law

2003

IEEE Trans. Electron Devices

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Abstract-The simulation of generation-recombination (GR) noise under periodic large-signal conditions in a partial differential equation-based silicon device simulator is presented. Using the impedance-field method with cyclostationary noise sources, it is possible to simulate the self-and cross-spectral densities between sidebands of a periodic large-signal stimulus. Such information is needed to develop noise correlation matrices for use with a circuit simulator. Examples are provided which demonstrate known results for shot noise in bipolar junction transistors. Additional results demonstrate the upconversion of low-frequency GR noise for microscopically cyclostationary noise sources and provide evidence for applying the modulated stationary noise model for low-frequency noise when there is a nearly quadratic current dependence.

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Section: ) Modulated Stationary Noise Modelmentioning

confidence: 99%

Section: ) Modulated Stationary Noise Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Sanchez

Bosman

Law

2003

IEEE Trans. Electron Devices

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“…

Complex noise processes are inherent to any semiconductor material [5][6][7].

…”

mentioning

confidence: 99%

Guest editorial for the special issue on noise modeling of high‐frequency semiconductor devices

Caddemi

Limiti

2015

Int J Numerical Modelling

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Noise processes in active solid-state devices govern their fundamental operational limits when high sensitivity is required or tight accuracy constraints are in play [1][2][3][4]. Moreover, noise generated in devices often is considered a measure of their quality and reliability.Complex noise processes are inherent to any semiconductor material [5][6][7]. That said, a deep knowledge of the underlying physics often is not required to accomplish the accurate design of a low-noise circuit. What is needed is a clear link between parameters governing microscopic noise processes and macroscopic behavior [8][9][10][11][12][13][14]. This link often is established via modeling and simulation (M&S), which enables the prediction of device performance in real-world circuits operating under tight accuracy constraints. M&S often allows for a characterization of the worst-case performance of noiseimpacted circuits without the need to account for excessively conservative safety margins or engage in costly iterative design approaches [15][16][17][18][19][20][21][22].The goal of this special issue is to assemble recent results and up-to-date surveys addressing the topic of modeling, simulation, and characterization of noise processes in advanced GaAs, GaN, Si, and SiGe devices, ranging from the low-frequency regime to millimeter wave frequencies. A total of 14 refereed papers (including this editorial) comprising 4 invited and 10 contributed papers are included in this special issue:➢ Balestra F, Ghibaudo G, Jomaah J. Modeling of low-frequency noise in advanced CMOS devices.Invited paper. ➢ Randa J. Numerical modeling and uncertainty analysis of transistor noise parameter measurements. Invited paper. ➢ Yu P, Chen B, Gao J. Microwave noise modeling for MOSFETs. Invited paper. ➢ Boglione L. A novel theoretical analysis for the determination of the noise parameters applicable to millimeter-wave frequencies. Invited paper. ➢ Bonani F, Donati Guerrieri S, Ghione G. Cyclostationary noise modeling of radio frequency devices. It is worth noting that our Call for Papers resulted in a geographically balanced contribution of papers, demonstrating a widespread and timely interest by the international research community in the topic. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDSInt. J. Numer. Model. 2015; 28:611-612 Published online 25 August 2015 in Wiley Online Library (wileyonlinelibrary.com).

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“…-For the low frequency noise sources, the modulation theory is still under development [4][5][6][7]. So, physicsbased empirical expressions will be used.…”

Section: Fig2: Basic Noise Measurement Set-upmentioning

confidence: 99%

Low phase noise 2 GHz HBT push-push VCO based on an advanced low frequency noise model

Cortese

Sion

Baglieri

et al.

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573)

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-After investigation of the possible HBT low frequency noise sources and their localization in order to extract a HBT low frequency noise model, the realisation and performances of a S band Voltage Controlled Oscillator (VCO) is reported. This VCO is fully integrated in MMIC technology, and is based on a push-push topology. The circuit is covering 280 MHz tuning range around a centre frequency of 2 GHz with a phase noise of -95 dBc/Hz at 10 KHz offset.

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Noise analysis in devices under nonlinear operation

Cited by 20 publications

References 13 publications

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Guest editorial for the special issue on noise modeling of high‐frequency semiconductor devices

Low phase noise 2 GHz HBT push-push VCO based on an advanced low frequency noise model

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