Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Taoka, Noriyuki; Asano, Tanemasa; Yamaha, Takashi; Terashima, Takashi; Nakatsuka, Osamu; Costina, Ioan; Zaumseil, P.; Capellini, Giovanni; Zaima, Shigeaki; Schroeder, Thomas

doi:10.1063/1.4908121

Cited by 22 publications

(17 citation statements)

References 30 publications

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“…Sn segregation during the growth and post-processing is one of the problems associated with the formation of homogeneous Ge 1− x Sn x layers. We found that Sn segregation occurs during the epitaxial growth of Ge 1− x − y Si x Sn y ternary alloys [20]. Sn segregation also occurs during the oxidation of Ge 1− x Sn x layers.…”

Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

“…Therefore, Sn atoms often precipitate in a GeSn(Si) layer and segregate on a GeSn(Si) surface during deposition and annealing after GeSn(Si) layer formation (referred to as PDA) [20, 21, 94]. Furthermore, high deposition temperatures and PDA at high temperatures induce Sn desorption from the surface [20, 21, 95]. These results mean that MOS technology for an Sn-based alloy is a challenging technology because a technique to precisely control the physical behaviors of Sn atoms during layer formation and PDA must be established.…”

Section: Heterostructures Interfaces and Defect Propertiesmentioning

confidence: 99%

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Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

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177

109

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We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.

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Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

Section: Heterostructures Interfaces and Defect Propertiesmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

Self Cite

177

109

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show abstract

“…We note that the Sn content of the middle barrier layer does not seem to drop significantly from its value in the well layers. A possible explanation is that although growth temperatures were kept low, some Sn diffusion could have smeared out the transition region between barrier and well layers [18]. XRD analysis with PANalytical Empyrean was used to characterize both samples.…”

Section: Layer Growth and Characterizationmentioning

confidence: 99%

Growth and characterization of SiGeSn quantum well photodiodes

et al. 2015

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We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.

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“…One of the serious problems is the Sn inclusion (precipitates) formation during GeSn layer growth [ 10 , 11 ]. In addition to precipitation, Sn segregation is observed in the process of GeSn, GeSiSn layer growth, and GeSn film oxidation [ 11 , 12 ]. Non-equilibrium growth techniques, such as the molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), serve reliable methods of the precipitation and segregation suppression.…”

Section: Introductionmentioning

confidence: 99%

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

et al. 2018

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The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150°С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram data, it becomes possible to identify the Sn cover on the Si surface and to control the Sn segregation on the superstructure observed on the reflection high-energy electron diffraction (RHEED) pattern. The multilayer structures with the GeSiSn pseudomorphic layers and island array of a density up to 1.8 × 10 12 cm −2 have been grown with the considering of the Sn segregation suppression by the decrease of GeSiSn and Si growth temperature. The double-domain (10 × 1) superstructure related to the presence of Sn on the surface was first observed in the multilayer periodic structures during Si growth on the GeSiSn layer. The periodical GeSiSn/Si structures demonstrated the photoluminescence in the range of 0.6-0.85 eV corresponding to the wavelength range of 1.45-2 μm. The calculation of the band diagram for the structure with the pseudomorphic Ge 0.315 Si 0.65 Sn 0.035 layers allows assuming that photoluminescence peaks correspond to the interband transitions between the X valley in Si or the Δ 4 -valley in GeSiSn and the subband of heavy holes in the GeSiSn layer.

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Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Cited by 22 publications

References 30 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and characterization of SiGeSn quantum well photodiodes

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

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