Nonlinear optics in ultra-silicon-rich nitride devices: recent developments and future outlook

Tan, Dawn T. H.; Ng, Doris K. T.; Choi, Ju Won; Şahin, E.; Sohn, Byoung-Uk; Chen, G. F. R.; Xing, Peng; Gao, Hongwei; Cao, Yu

doi:10.1080/23746149.2021.1905544

Cited by 21 publications

(17 citation statements)

References 78 publications

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“…In previous work, ultra-silicon-rich-nitride films demonstrated a nonlinear refractive index 100 times greater than stoichiometric silicon nitride [8,[37][38][39][40]. Prevailing characterization of silicon-nitride thin films fabricated with different ratios of precursor gases suggests that the linear and nonlinear refractive indices of the SRN:D films increase correspondingly with silicon content [38,[41][42][43][44].…”

Section: Discussionmentioning

confidence: 93%

“…From the standpoint of photonics applications, N2 is a superior precursor gas than NH3, as it precludes formation of N-H bonds which also possess absorption overtones at the short-wave infrared wavelength [6]. In our prior work, we have aimed to eliminate N-H bonds in ultra-silicon-rich-nitride films by utilizing N2 gas instead of NH3 gas [7][8][9]. The formation of Si-H bonds in films however is not easily resolved whether SiH4 or SiH2Cl2 precursor gases are used for the film growth.…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear optical characterization of deuterated silicon-rich nitride waveguides

Chia

Chen

Cao

et al. 2021

OSA Nonlinear Optics 2021

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Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with SiH4 and SiD4, and experimentally confirm that the silicon-rich nitride films grown with SiD4 eliminates Si-H related absorption. Waveguides fabricated on the films are further shown to possess a linear and nonlinear refractive index of 2.46 and 9.8×10 -18 m 2 W -1 respectively.

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Section: Discussionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Nonlinear optical characterization of deuterated silicon-rich nitride waveguides

Chia

Chen

Cao

et al. 2021

OSA Nonlinear Optics 2021

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“…Moreover, all the methods have mostly focused on optimising the Si 3 N 4 stoichiometric composition (n = 2.0), except for the multistep annealing process that has also demonstrated low-loss Si-rich SiN films (n = 2.07). This narrow range of refractive indices poses limitations for nonlinear applications that require higher refractive indices to achieve stronger nonlinear effects [11,36] and for the demonstration of devices operating at shorter telecom wavelengths which often benefit from lower refractive indices to minimise propagation losses and phase errors [37,38].…”

Section: Discussionmentioning

confidence: 99%

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

Gardes

Shooa

Paoli

et al. 2022

Sensors

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In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

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“…[ 10,12,13 ] Finally, topological silicon photonics could continue to see advances from the standpoint of expanded use of other silicon‐based or CMOS‐compatible materials which bring with them a whole suite of potential advantages. [ 119–124 ] It is clear that the advancements made in the exciting and burgeoning field of topological silicon photonics hold tremendous promise, with significant and far‐reaching innovations expected to continue.…”

Section: Discussionmentioning

confidence: 99%

Topological Silicon Photonics

Tan

2021

Advanced Photonics Research

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The field of topological photonics has seen tremendous and wide‐ranging developments in recent years. Evolving from the broader field of topological insulators, topological photonics systems today harness a variety topological phases. These include the Su–Schreifer–Heeger, quantum Hall, quantum valley Hall and quantum spin Hall topologies. Importantly, the latter two generate edge states with opposite group velocities and opposite spin, respectively, allowing unidirectional light propagation and advanced photonic routing to occur. Amongst these exciting developments is a subset of advancements made in topological silicon photonics, which could potentially lend its appeal to complementary metal–oxide–semiconductor (CMOS) photonics applications, including telecommunications, data communications, quantum photonics, future exascale supercomputers, photonic neuromorphic computing, and infrared sensing. The fundamental underpinnings of these topological phases lead to interesting features, including chirality, scatter‐free light propagation around sharp bends, and importantly topological protection against defects, disorder, and scattering. This topological protection may be harnessed toward tunable light propagation, photon‐pair generation, quantum spatial entanglement, robust photonic routing, and beyond. Herein, the recent advancements made in the burgeoning field of topological silicon photonics are discussed.

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Nonlinear optics in ultra-silicon-rich nitride devices: recent developments and future outlook

Cited by 21 publications

References 78 publications

Nonlinear optical characterization of deuterated silicon-rich nitride waveguides

Nonlinear optical characterization of deuterated silicon-rich nitride waveguides

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

Topological Silicon Photonics

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