Nonvolatile, high density, high performance phase-change memory

Tyson, S.; Wicker, Guy; Lowrey, T.; Hudgens, S. J.; Hunt, K.

doi:10.1109/aero.2000.878512

Cited by 55 publications

(34 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Usually, a very high current is required to generate an adequate energy to switch the cell, especially for RESET operations. To make PCM operate at CMOS compatible voltages, various cell structures have been developed to improve electrical-to-thermal efficiency through device geometry optimization [16,[22][23][24][25][26][27][28]. One effective approach has been to create sub-lithographic features to minimize the volume of the phase change material in the current path through the PCM storage element.…”

Section: Cell Structure: Pcm Storage Elementmentioning

confidence: 99%

Phase change memory

Lam

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

Phase change memory (PCM) is a non-volatile solid-state memory technology based on the large resistivity contrast between the amorphous and crystalline states in phase change materials. We present the physics behind this large resistivity contrast and describe how it is being exploited to create high density PCM. We address the challenges facing this technology, including the design of PCM cells, fabrication, device variability, thermal cross-talk and write disturb. We discuss the scalability, assess the performance, and examine the reliability of PCM including data retention, multi-bit storage and endurance.

show abstract

Section: Cell Structure: Pcm Storage Elementmentioning

confidence: 99%

Phase change memory

Lam

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

show abstract

“…It is possible in such systems to control not only quality of the border "ferromagnetic metal -non-magnetic semiconductor", but also manage of the current carrier's concentration and change the type of magnetic ordering. The discrete alloys should be considered as random magnet systems owing to hardly inhomogeneous allocation of a magnetic phase in sub-monolayers [9,10].…”

Section: Quantum Effects In Molecular Nanostructuresmentioning

confidence: 99%

Quantum Effects Based Materials for Nanosensory Systems

Kervalishvili

Berberashvili

2013

Black Sea Energy Resource Development and Hydrogen Energy Problems

View full text Add to dashboard Cite

Development of sensory elements, devices and novel information technologies based systems is unique for solving organization difficulties of multiparametral and precise measurements of hydrocarbons and related substances. An effective prevention implies sensory system that provides combines and interprets applicable individual information in due time and then takes appropriate measures. Such sensory systems should record data as soon as an action is necessary. Utilization of quantum effects in solid state systems opened a new way for elaboration of novel sensory materials and devices widely using the nanoscience and nanotechnology methods for their preparation.One of the most suitable examples of nano and quantum effects connection is the process of the spin-polarized transport of charge in -ferromagnetic semiconductor nanolayers with controlled disorder. Operation of a spintronic device requires efficient spin injection into a semiconductor, spin manipulation, control and transport, and spin detection. The relevant role in solution of this problem is shunted to search and investigations of new ferromagnetic materials, which are capable to be reliable spin injectors and effective memory resistors as well.The execution of researches within the framework of the given chapter will allow studying the quantum effects in ferromagnetic nanolayers with controlled disorder. The most essential mechanisms, responsible for the transport properties, electronic and magnetic structures of these materials were determined. It also served as basis for creation of practical spinelectronics sensory devices having in their structure the interfaces such as ferromagnetic discrete alloy -non-magnetic semiconductor.

show abstract

“…Phase change memory (PCM) has been considered to be an attractive alternative for the next generation NVM. PCM offers many advantages compared with flash memory , including excellent scalability [2], fast read/write speed [3] and low power consumption [4].…”

Section: Introductionmentioning

confidence: 99%