Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase  $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Wu, Yung-Hsien; Chen, Lun-Lun; Wu, Jia-Rong; Wu, Min-Lin; Lin, Chih-Long; Chang, Chun‐Hsiang

doi:10.1109/led.2010.2055530

Cited by 27 publications

(22 citation statements)

References 10 publications

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“…Having investigated the feasibility to use crystalline ZrO2 as the CTL for flash memory, the comparison of device performance between a crystalline and an amorphous CTL were further studied to better understand how much performance enhancement can be gained by adopting a crystalline CTL [21]. In the study, 3-nm and 17.5-nm SiO2 were respectively used as the tunnel and blocking dielectric while 13-nm ZrON deposited by reactive sputtering of Zr target in a mixture gas ambient of oxygen/nitrogen/argon was adopted as the CTL.…”

Section: (A) Investigating Crystalline Zro2 As Ctl For Si-based Flasmentioning

confidence: 99%

Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

Chen

Teng

Chang

et al. 2016

IEEE J. Electron Devices Soc.

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Journal of the Electron Devices Society 6 V. CONCLUSION With incumbent flash memory devices operated in the range of 15-17 V, it is imperative to pursue green flash memory that can be operated at voltage less than 10 V to realize a sustainable environment. In this paper, two promising CTL types based on crystalline oxide including crystalline high-k dielectric and crystalline oxide semiconductor which possess the capability to achieve this goal are reviewed. For CTL based on crystalline high-k dielectric, the distinct advantage for memory operation is the k value higher than 30 which is much higher than the amorphous counterpart and beneficial to reduce operation voltage since a higher effective electric field can be exerted on the tunnel SiO2 due to electric flux density continuity. The most concerned retention issue of adopting a crystalline high-k CTL has also be circumvented by passivation of grain boundaries related defects through plasma treatment. The concept of employing crystalline high-k dielectric as CTL not only works for Si-channel flash memory but also Ge-channel memory devices which enable superior memory performance to Si-based counterpart due to higher carrier mobility and more desirable band structure. For CTL based on crystalline oxide semiconductor, a CTL formed by stacking n-type and p-type oxide semiconductor demonstrates typical diode characteristics with a built-in internal electric field. It is the unique internal field that enhances P/E speed while reducing the operation voltage. Both kinds of CTL create a differentiating and pioneering technology that gains an outlook on realizing green flash memory devices.

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Section: (A) Investigating Crystalline Zro2 As Ctl For Si-based Flasmentioning

confidence: 99%

Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

Chen

Teng

Chang

et al. 2016

IEEE J. Electron Devices Soc.

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“…The higher P/E speeds should be due to the higher chargetrapping efficiency of the HfLaON sample with an amorphous HfLaON composite film as the CTL. For the LaON sample, its LaON film shows poly-crystalline structure [5], where the grain boundaries can provide a leakage path to facilitate electrons escaping from the CTL to the gate electrode rather than being trapped in the chargetrapping film, thus leading to a lower trapping efficiency [1], [5]. In addition, due to the shortened tunneling path, the electrons stored in the traps associated with the nonstoichiometric interlayer at the CTL/SiO 2 interface are also easier to escape from the CTL into the Si substrate than those located in the bulk traps [4].…”

Section: Results and Disscusionmentioning

confidence: 99%

“…With an initial ǻV FB of about ~ 3.1 V, the decay rate of the data retention is 65 mV/dec and 80 mV/dec for the HfLaON and LaON samples respectively. The worse data retention of the LaON sample should be ascribed to the poly-crystalline structure of the LaON film, where the electrons trapped along the grain boundaries are easier to escape, thus deteriorating the data retention [1], [5]. Moreover, the formation of La silicate interlayer at the CTL/SiO 2 interface could also contribute to its poor retention property, because the traps associated with the interlayer can accelerate the charge loss [4].…”

Section: Results and Disscusionmentioning

confidence: 99%

“…Charge-trapping flash memories with Metal-OxideNitride-Oxide-Si (MONOS) structure have attracted increasing attention as a promising candidate for nextgeneration nonvolatile memories, mainly due to their lower power consumption, higher reliability, and stronger scaling ability than their floating-gate counterparts [1]- [5]. Si 3 N 4 was the first dielectric used as the charge-trapping layer (CTL).…”

Section: Introductionmentioning

confidence: 99%

“…Si 3 N 4 was the first dielectric used as the charge-trapping layer (CTL). Then, many efforts have been spent to study high-k dielectrics as CTL for continually scaling the cell size and improving the charge-storage capacity [1]- [5]. Among various high-k dielectrics, La 2 O 3 is a promising candidate as CTL, mainly because of its high dielectric constant, proper conduction-band offset with Si, and deep traps [2], [6].…”

Section: Introductionmentioning

confidence: 99%

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HfON/LaON as charge-trapping layer for nonvolatile memory applications

Huang

Lai

2012

2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)

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The charge-trapping characteristics of HfON/LaON composite film (denoted as HfLaON) were investigated based on an Al/Al 2 O 3 /HfLaON/SiO 2 /Si (MONOS) capacitor. The physical properties of the high-k film were analyzed by transmission electron microscopy and electron diffraction spectroscopy. Compared with another MONOS capacitor with nitrided La 2 O 3 as charge-trapping layer, the one with HfLaON showed better memory characteristics in terms of larger memory window, higher program speed (6.3 V at +14 V for 100 ȝs), and smaller charge loss (8.2% after 10 4 sec), due to the HfLaON composite film exhibiting an amorphous structure and the suppressed formation of an interlayer at the HfLaON/SiO 2 interface.

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Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Kim

Lee

Shin

et al. 2021

Adv Funct Materials

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With the recent interest in data storage in flexible electronics, highly reliable charge trap-type organic-based non-volatile memory (CT-ONVM) has attracted much attention. CT-ONVM should have a wide memory window, good endurance, and long-term retention characteristics, as well as mechanical flexibility. This paper proposed CT-ONVM devices consisting of band-engineered organic-inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5-trimethyl-1,3,5,-trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10 4 cycles, and charge retention of up to 71% after 10 8 s even under the 2% strained condition. The CT-ONVM device using the hybrid dielectric stacks outperforms other organic-based charge trap memory devices and is even comparable in performance to conventional inorganic-based poly-silicon/oxide/nitride/oxide/silicon structures devices. The CT-ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.

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Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Cited by 27 publications

References 10 publications

Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

HfON/LaON as charge-trapping layer for nonvolatile memory applications

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

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