Novel Capacitive Pressure Sensor

Bakhoum, Ezzat G.; Cheng, Hung-Ming

doi:10.1109/jmems.2010.2047632

Cited by 36 publications

(23 citation statements)

References 12 publications

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“…Barium titanate (BaTiO 3 or BTO) thin films have been extensively studied over the years because of the wide range of applications in thin-film capacitors [1], non-volatile memories, electro-optical devices [2], and MEMS devices [3], owing to their interesting dielectric [4], ferroelectric [5], piezoelectric and electro-optical [6] properties. A variety of methods have been demonstrated for the growth of BTO thin films.…”

Section: Introductionmentioning

confidence: 99%

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

et al. 2013

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Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm.

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Section: Introductionmentioning

confidence: 99%

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

et al. 2013

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“…Among the ferroelectric perovskites, BaTiO 3 (BTO) has intensively been studied for a wide range of applications [1], MEMS devices [2], non-volatile memories, electro-optical devices [3], and piezoelectric and electro-optical properties [4].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Epitaxial and Textured Ferroelectric BaTiO<sub>3</sub> Thin Films

Wagué¹,

Baboux²,

Romeo³

et al. 2020

JMP

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The properties of BaTiO 3 (BTO) thin films deposited on different substrates by RF magnetron sputtering were investigated. Two representative substrates were selected and different heterostructures were studied. 1) SrTiO 3 (STO) single crystals as a bulk oxide reference material, and 2) silicon as a semiconductor. SrRuO 3 (SRO) and Pt bottom electrodes were deposited on the silicon substrate. The BTO structural characterizations show that all the films have (001) crystallographic orientation. We have compared the electrical properties of the different samples: the same dielectric constant and polarization values were obtained independently of the nature of the substrate.

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“…For pressure/force/strain detection they exploit the piezoresistive effect [2][3][4], the piezoelectric effect [5][6][7][8] or capacitive changes [9,10], whereas for temperature sensing capacitive [11] and pyroelectric-based sensors [12] can be found.…”

Section: Introductionmentioning

confidence: 99%

Multifunctional sensor based on organic field-effect transistor and ferroelectric poly(vinylidene fluoride trifluoroethylene)

Hannah¹,

Davidson²,

Glesk³

et al. 2018

Organic Electronics

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A B S T R A C TA multifunctional sensor that responds to all -static/quasi-static or dynamic temperature or force -is reported. The sensor is based on a ferroelectric poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) capacitor connected to the gate of organic field-effect transistor (OFET). Both, the P(VDF-TrFE) capacitance and the output voltage of the P(VDF-TrFE)/OFET sensor exhibit a logarithmic response to static compressive force, leading to higher sensitivity for small forces. In addition, both the P(VDF-TrFE) capacitance and the output voltage of the P (VDF-TrFE)/OFET sensor exhibit a linear dependence on the static/constant temperature. Response to static force or temperature is observed irrespective of whether P(VDF-TrFE) is in ferroelectric or paraelectric states, confirming that piezo/pyroelectricity is not essential when monitoring static events. The piezo/pyroelectricity become activated during dynamic events (dynamic force or temperature) when the ferroelectric P(VDF-TrFE)/ OFET sensor is used. The obtained results indicate different sensing mechanisms for static and dynamic stimuli. Consequently, by choosing P(VDF-TrFE) layers in ferroelectric or paraelectric states a route for differentiating between the static and dynamic stimuli may exist.

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Novel Capacitive Pressure Sensor

Cited by 36 publications

References 12 publications

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Comparison of Epitaxial and Textured Ferroelectric BaTiO<sub>3</sub> Thin Films

Multifunctional sensor based on organic field-effect transistor and ferroelectric poly(vinylidene fluoride trifluoroethylene)

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Novel Capacitive Pressure Sensor

Cited by 36 publications

References 12 publications

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Comparison of Epitaxial and Textured Ferroelectric BaTiO&lt;sub&gt;3&lt;/sub&gt; Thin Films

Multifunctional sensor based on organic field-effect transistor and ferroelectric poly(vinylidene fluoride trifluoroethylene)

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Comparison of Epitaxial and Textured Ferroelectric BaTiO<sub>3</sub> Thin Films