Novel integration technique for silicon/III-V hybrid laser

Abstract

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique.

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6plasma

“…The integration of such devices onto silicon substrates is an emerging trend, offering the opportunity to combine, for example, low-power opto-electronic devices [7][8][9] and highelectron-mobility transistors [10] based on III-V compound semiconductors with complex silicon microelectronic circuits. Numerous techniques have been developed for the microfabrication of such III-V devices [11], among which processes for selective etching are essential.…”

Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

“…It is highly desirable to develop an alternative material featuring lower-cost and high-performance for SWIR photodetectors. [1][2][3][4] Recently, GeSn techniques have drawn much attention as the success of developing GeSn alloy has opened an avenue for a totally new generation of infrared detectors. Research activities in GeSn-based detectors have experienced a strong increase in the past a few years.…”

Silicon and hybrid silicon photonic devices for intra-datacenter applications: state of the art and perspectives [Invited]

“…Wafer-bonding technologies by means of (1) molecular bonding [5,[39][40][41][42][43][44][45][46][47][48][49][50][51][52][53], (2) adhesive bonding [54][55][56][57][58][59][60][61][62][63][64], and (3) metallic bonding [65][66][67] have long been demonstrated for various types of hybrid silicon integrated on-chip light sources with good performance. Figures 3(a)-3(c) illustrate the bonding processes for molecular, adhesive, and metallic bonding.…”

“…O 2 plasma treatment is used to activate the bonding surface. It offers high bonding strength with a typical oxide thickness of ∼10-100 nm [5,[39][40][41][42][43][44][45][46][47][48][49][50][51][52][53].…”

“…This imposes a device layer thickness mismatch between the hybrid silicon laser and the SOI photonic components, which are typically fabricated with a silicon layer thickness of less than 340 nm for single-mode operation. To overcome the device layer thickness incompatibility, technology platforms including silicon epitaxial growth for the hybrid silicon region [48] or etch down in the silicon device regions [46] have been adopted.…”