Novel Photo Resist Stripping for Single Wafer Process

Okuyama, Atsushi; Asada, K.; Abe, Hitoshi; Iwamoto, Hayato; Okamoto, Yoshio; Wada, Takuya

doi:10.4028/www.scientific.net/ssp.103-104.297

Cited by 9 publications

(7 citation statements)

References 2 publications

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“…This can be achieved without too much effort on single wafer. Due to higher concentration of Caro acid H2SO5, fresh hot SPM enables better stripping ability than conventional re-circulated batch systems [6]. Nonetheless, hot rinse is applied to avoid ammonium sulfates crystal formation.…”

Section: Oxide Etchmentioning

confidence: 99%

Gate Oxide Cleans on Single Wafer Tool

Garnier¹,

Vessa²,

Larrea³

et al. 2007

ECS Trans.

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Pre gate oxide and especially "Double Gate Oxide" cleans are the most critical surface preparation steps in the semiconductor industry. This paper describes the key parameters to perform this kind of operations on a fully integrated single wafer cleaning tool. This switch from conventional batch cleaning tool enables significant defect density reduction and therefore yield enhancement. Nonetheless the main challenge of the double gate oxide clean is the prevention and the control of photo lithography resist lift off during the wet etch. This clean is also composed of two other steps, less critical. Nonetheless special care has been considered in the surface preparation in order to avoid any electrical mobility degradation.

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Section: Oxide Etchmentioning

confidence: 99%

Gate Oxide Cleans on Single Wafer Tool

Garnier¹,

Vessa²,

Larrea³

et al. 2007

ECS Trans.

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“…However, the dopant loss due to wet etching after non-uniform excess oxidation by a plasma treatment has became a critical issue for fabrication. A plasma-less wet stripping of ion implanted photoresist at ~1E15 atoms/cm 2 level has been reported [1], but it is very hard to remove the implanted resists at ~1E16 atoms/cm 2 without the ashing process. Therefore, we will propose a novel technology for stripping resists without the ashing process.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Less Photoresist Stripping

Takahashi¹

2007

ECS Trans.

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In this paper, a novel technology for stripping implanted resists that uses wafer baking, followed by a combination of high temperature SPM (sulfuric acid / hydrogen peroxide mixture) and ultrasonics through H 2 SO 4 will be proposed. We found that plasma-less stripping of highly dosed (1E16) resist is possible without damage in a short time, by making optimum reactive combinations of thermal decomposition and oxidation of resist (by baking and high temperature SPM), and then by removing residue using H 2 SO 4 and ultrasonic waves.

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“…A plasma-less wet stripping of ion implanted photoresist at ~1E15 atoms/cm 2 level has been reported [1], but it is very hard to remove the implanted resists at ~1E16 atoms/cm2 without the ashing process. In this paper, a novel technology that uses (1) wafer baking, followed by a combination of (2) high temperature SPM (sulfuric acid/hydrogen peroxide mixture) and (3) ultrasonic passed through H 2 SO 4 will be proposed.…”

Section: Introductionmentioning

confidence: 99%