Novel Rewritable, Non‐volatile Memory Devices Based on Thermally and Dimensionally Stable Polyimide Thin Films

Abstract

Novel digital memory devices were fabricated with a thermally and dimensionally stable polyimide containing carbazole moieties in its side groups by using a simple and conventional solution coating process. The devices exhibit excellent unipolar ON and OFF switching behavior. With very low power consumption, the devices can be repeatedly written, read, and erased in air. The ON/OFF current ratio of the devices is high up to 1011. The high ON/OFF switching ratio and stability of the devices, as well as their repeatable writing, reading, and erasing capability with low power consumption, open up the possibility of the mass production of high performance non‐volatile memory devices at low cost.

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge‐Trapping in Organic Materials

“…[5,6] Because all of the devices were fabricated by using the same method under controlled conditions, the thicknesses of thin films of NIT n CzNO 2 (n = 0, 1, 2) were very consistentw ith each other (ca. 80 nm;s ee the Supporting Information, Figure S5).…”

“…[1c, 5,6] These requirements become more challenging for multilevel RRAMs, because the writing/reading voltagew indows for each level must be separated within an arrow range.…”

Organic nonvolatile memory transistors with self-doped polymer energy well structures

“…[1][2][3][4] Among the various types of organic memory devices, a considerable number of studies have been devoted to nonvolatile memory systems that include organic-resistive-switching diode memory and organic fieldeffect transistor (OFET) memory. [5][6][7][8][9][10][11][12][13][14][15][16][17] The organic-resistive-switching diode memory devices consist of organic-resistive layers between two electrodes, which typically act as either electrically insulating components or electrically conducting components under appropriate voltage conditions. [5][6][7][8][9][10] However, the organic-resistiveswitching diode memory devices require transistors for addressing signals in two-dimensional memory arrays because they do not possess third electrodes for signal addressing.…”

High-performance triazole-containing brush polymers via azide–alkyne click chemistry: a new functional polymer platform for electrical memory devices

“…[16][17][18][19] Thus far, numerous electrical memory polymers composed either of fully π-conjugated backbones [17][18][19][21][22][23][24][25] or of nonconjugated backbones bearing only electron-donor units or both electron-donor and -acceptor units as parts of the backbone and/or side groups have been reported. [18][19][20][26][27][28][29] In particular, the majority of the nonconjugated polymers have been synthesized with carbazole, triphenylamine, fluorine and their derivatives. [18][19][20][26][27][28][29] Moreover, they are known to mainly exhibit p-type electrical memory characteristics.…”

“…[18][19][20][26][27][28][29] In particular, the majority of the nonconjugated polymers have been synthesized with carbazole, triphenylamine, fluorine and their derivatives. [18][19][20][26][27][28][29] Moreover, they are known to mainly exhibit p-type electrical memory characteristics. In contrast, n-type memory polymers have rarely been reported.…”