Numerical simulation and comparison of Si BJTs and Si/sub 1-x/Ge/sub x/ HBTs

Pejčinović, Branimir; Kay, L.E.; Tang, Ting-Wei; Navon, D.H.

doi:10.1109/16.40892

Cited by 63 publications

(23 citation statements)

References 20 publications

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“…On the other hand, SiGe valence band effective DOS is usually fixed as in bulk silicon [9] or assumed to be linearly dependent on the mole fraction [10]. We propose an analytical approximation for the hole effective DOS which includes the Ge mole fraction and lattice temperature dependences.…”

Section: Effective Density Of States Modelsmentioning

confidence: 99%

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Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation

Sasso

Rinaldi

Matz

et al. 2010

2010 International Conference on Simulation of Semiconductor Processes and Devices

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Section: Effective Density Of States Modelsmentioning

confidence: 99%

“…The model for SiGe conduction band proposed in [9] includes main dependences, computing effective DOS for electrons as in (4), where the parameters can be extracted from the schematic view of band degeneracy splitting proposed by Prinz [7]:…”

Section: Effective Density Of States Modelsmentioning

confidence: 99%

Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation

Sasso

Rinaldi

Matz

et al. 2010

2010 International Conference on Simulation of Semiconductor Processes and Devices

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“…6) Their presence can modify the carrier's mobility [117] and offers possibilities for bandgap engineering [118], a key point in Si-based technology.…”

Section: Impact Of Isovalent Doping a Backgroundmentioning

confidence: 99%

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos

Sgourou

Hall

et al. 2014

J Mater Sci: Mater Electron

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Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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“…Some of very promising results on SiGe-HBTs have been reported [4]. So strained SiGe is one of new technologies that enables a fairly dramatic increase in performance with a relatively change in germanium profile in starting materials [5]. A comparison of device performance is given in Table-1, it is seen that the SiGe-HBTs provide equal or better performance for low noise amplifier applications and IBMs SiGe-BiCMOS technologies allow for high levels of integration with a cost structure similar to standard silicon BiCMOS process [6].…”

Section: Introductionmentioning

confidence: 99%