Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending

Asadirad, Mojtaba; Pouladi, Sara; Shervin, Shahab; Oh, Seung Kyu; Lee, Keon Hwa; Kim, Jeomoh; Lee, Sung‐Nam; Gao, Ying; Dutta, Prashanta; Selvamanickam, V.; Ryou, Jae‐Hyun

doi:10.1109/led.2016.2645451

Cited by 15 publications

(10 citation statements)

References 15 publications

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“…Figure 3 shows the I ds ÀV ds characteristics of a flexible HEMT in the flat (black), bend-down (red), bend-up (blue), and re-flat (green) conditions with no applied gate voltage (V g ¼ 0 V). The bending direction is perpendicular to the source-to-drain direction to avoid decreased mobility resulting from the channel curvature, 19,20 as shown in the insets of Fig. 3.…”

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confidence: 99%

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Wang

Chen

Lundh

et al. 2020

Applied Physics Letters

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We investigate the effect of strain on the two-dimensional electron gas (2DEG) channel in a flexible Al 0.25 Ga 0.75 N/GaN high-electron-mobility transistor (HEMT) by mechanical bending to prove the concept of active polarization engineering to create multifunctional electronic and photonic devices made of flexible group III-nitride thin films. The flexible HEMTs are fabricated by a layer-transfer process and integrated with a 150-lm-thick Cu film. The strain values are estimated from high-resolution x-ray diffraction and Raman spectroscopy in 4-cm bend-down and À4-cm bend-up test conditions. The strain-induced piezoelectric polarization can alter the charge density of the 2DEG in the channel at the AlGaN/GaN interface and thus modify the output characteristics of the flexible HEMTs. Accordingly, output characteristics show an increase in output current by 3.4% in the bend-down condition and a decrease by 4.3% in the bend-up condition. Transfer characteristics show a shift of threshold voltage, which also supports the 2DEG channel modulation during bending. Computational simulation based on the same structure confirms the same current modulation effect and threshold voltage shift. Furthermore, the electrical characteristics of the flexible HEMTs show a repeatable dependence on the strain effect, which offers potential for electro-mechanical device applications.

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confidence: 99%

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Wang

Chen

Lundh

et al. 2020

Applied Physics Letters

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“…(3) Field effect mobility μ n has been reported to be affected by strains for both bulk and flexible TFTs. 48 In this work, field effect mobility μ n can be calculated by eq 2, where C ox in eq 2 is expressed by…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…It shows that the field effect mobility μ n is the dominant factor for the performance variation of flexible TFTs with bending strains, The main reason is that, when the device is bent, electron velocity vector and electric field in device channel are not parallel, causing the decrease of μ n . 48 The decreased μ n leads to the reduction of channel conductivity, thus reducing both the drain current and peak transconductance with larger strain. Nevertheless, the flexible single-crystalline SiNM TFTs with BMN ceramic gate dielectrics show slight performance variations with bending strains, indicating a good robustness of these devices under mechanical deformation conditions.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb₂O₅–Bi₂O₃–MgO Ceramics as Gate Dielectric on a Plastic Substrate

Qin

Zhang

Lan

et al. 2018

ACS Appl. Mater. Interfaces

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A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k NbO-BiO-MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10, and the threshold voltage is ∼1.3 V, with over 200 cm/(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

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“…从柔性器件应用层面来讲, 现有的转移技术在薄膜释放过程中都会带来一定程度的损耗, 有必要设计更新的转移工艺以减少损耗同时维持一个恰当的成本 [108] . 虽然硅、锗薄膜纳米量级的厚度使其具备了机械上可弯曲的柔性, 但弯曲过程中伴随的应力会对薄膜本身物理性质带来一定的影响, 甚至造成器件电学特性的衰退 [109,110] , 有必要在深入了解其中的物理机制的基础上探索出更有效的解决措施. 此外, 现有的柔性薄膜器件多采用手工方式转移及制备, 实现柔性硅锗器件大规模自动化生产流程, 将进一步促进这类材料在柔性器件上的应用.…”

Section: 总结与展望unclassified

Transfer techniques for single-crystal silicon/germanium nanomembranes and their application in flexible electronics

Guo

Huang

et al. 2018

Sci. Sin.-Inf.

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Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending

Cited by 15 publications

References 15 publications

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb₂O₅–Bi₂O₃–MgO Ceramics as Gate Dielectric on a Plastic Substrate

Transfer techniques for single-crystal silicon/germanium nanomembranes and their application in flexible electronics

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Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending

Cited by 15 publications

References 15 publications

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb2O5–Bi2O3–MgO Ceramics as Gate Dielectric on a Plastic Substrate

Transfer techniques for single-crystal silicon/germanium nanomembranes and their application in flexible electronics

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High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb₂O₅–Bi₂O₃–MgO Ceramics as Gate Dielectric on a Plastic Substrate