Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

Yu, Hengyu; Liang, Shiwei; Liu, Hangzhi; Wang, Daming; Shen, Z. John

doi:10.1109/ted.2021.3097979

Cited by 24 publications

(10 citation statements)

References 24 publications

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“…The Q gd is smaller than 164.6% of the PS-TMOS due to the source-connected SG and p-pillar shield region working together to reduce the overlap area between gate and drain of the GSDP-TMOS structure. Moreover, the high-frequency figure of merit (HF-FOM, R on,sp × Q gd,sp ) is a very important parameter to comprehensively evaluate the electrical performances of SiC power devices, [38][39][40] and it can be obtained by calculating the R on,sp and Q gd,sp values of the above two structures. The HF-FOM (R on,sp × Q gd,sp ) of the PS-TMOS is 271.1 mΩ•nC.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Shen

Wang²,

Li³

et al. 2023

Chinese Phys. B

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A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate (SG), and p-type pillar (p-pillar) surrounded thick oxide shielding region (GSDP-TMOS) is investigated by Silvaco TCAD simulations. The source-connected SG and p-pillar shielding regions are introduced to form an effective two-level shielding, which reduces the specific gate-drain charge (Q gd,sp) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. A p-pillar shielding region surrounded thick oxide efficiently protects gate oxide from peak electric field, thereby increasing the breakdown voltage (BV). Additionally, because of the high concentration on the n-type drift region, the electrons diffuse rapidly and the specific on-resistance (R on,sp) becomes smaller. In the end, compared with the bottom p+ shielded trench MOSFET (GP-TMOS), the Baliga figure of merit (BFOM, BV2/R on,sp) is increased by 169.6%, and the high-frequency figure of merit (HF-FOM, R on,sp×Q gd,sp) is significantly improved by 310%, respectively.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Shen

Wang²,

Li³

et al. 2023

Chinese Phys. B

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“…Some researchers embed heterojunction diodes in power devices to improve the electrical performance of the devices. [24][25][26][27][28][29] Yu et al [24] reported a novel SiC power MOS-FET structure. Yoon [25] proposed a SiC MOSFET insted heterojunction diode, which provided some protection against the electric field.…”

Section: Introductionmentioning

confidence: 99%

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode

et al. 2023

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A new SiC asymmetric cell trench MOSFET with split gate (SG) and integrated p+-polySi/SiC heterojunction freewheeling diode (SGHJD-TMOS) is investigated in this article. SG structure of the SGHJD-TMOS structure can effectively reduce the gate-drain capacitance and reduce the high gate oxide electric field. The integrated p+-polySi/SiC heterojunction freewheeling diode substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device. Numerical analysis results show that compared with the conventional asymmetric cell trench MOSFET (CA-TMOS), the high-frequency figure of merit (HF-FOM, R on,sp×Q gd,sp) is reduced by 92.5%, and the gate oxide electric field is reduced by 75%, respectively. In addition, forward conduction voltage drop (V f) and gate-drain charge (Q gd) are reduced from 2.90 V and 63.5 µC/cm2 for the CA-TMOS to 1.80 V and 26.1 µC/cm2 for the SGHJD-TMOS, respectively. Compared with the CA-TMOS, the turn-on loss (Eon) and turn-off loss (Eoff) of the SGHJD-TMOS are reduced by 21.1% and 12.2%, respectively.

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“…The barrier height for electrons Φ BN in a p-type polysilicon/n-type SiC HD [22][23][24] could be reduced to about 1.48 eV, resulting in a small V F for the device. While integrating an n-type polysilicon/n-type SiC HD 25) is also proposed to further decrease V F due to the lower Φ BN of about 0.68 eV across the n-type HD. Compared with previous approaches, the n-type polysilicon/n-type SiC HD has the lowest barrier height, resulting in a smallest cut-in voltage of ∼0.5 V, which should be considered as the best integration solution so far.…”

Section: Introductionmentioning

confidence: 99%

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Wang

Jia

Zhou

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, a novel SiC trench-gate MOSFET with integrated heterojunction diode (HD-TG-MOS) is proposed and studied according to TCAD simulations. The n-type polysilicon/n–type SiC HD is introduced into the groove by the direct contact between the polysilicon and semiconductor. As a result, significant improvements of device performance in the first and third quadrants are observed as compared to the conventional SiC trench-gate MOSFET (C-TG-MOS). Better yet, aided by the extremely low barrier height across the heterojunction, the knee voltage reduces to only 0.5 V with comparison of that of ~2.7 V for the body diode, when used for reverse freewheeling. These promotions make SiC HD-TG-MOS more advantageous for high-frequency power conversion applications. In addition, another cell architecture variant adopting a similar concept is presented, and the according process implementation is addressed as well from viewpoint of manufacture.

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Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

Cited by 24 publications

References 24 publications

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

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Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

Cited by 24 publications

References 24 publications

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

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A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode