1997
DOI: 10.1016/s0040-6090(96)09544-2
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Observation of a novel electron beam effect: electron-stimulated associative desorption

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Cited by 14 publications
(13 citation statements)
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“…Desorption after electron dosing of the surface indicates that this system exhibits "electron-stimulated associative desorption" (ESAD) of N 2 . The ESAD mechanism has been reported for ammonia on both Pt(111) [15] and Si(100) [16]. The TPD results also suggest the likely involvement of NO dimers on the surface which then decompose to produce desorption of N 2 O.…”
Section: Discussionmentioning
confidence: 53%
“…Desorption after electron dosing of the surface indicates that this system exhibits "electron-stimulated associative desorption" (ESAD) of N 2 . The ESAD mechanism has been reported for ammonia on both Pt(111) [15] and Si(100) [16]. The TPD results also suggest the likely involvement of NO dimers on the surface which then decompose to produce desorption of N 2 O.…”
Section: Discussionmentioning
confidence: 53%
“…This latter signal is ascribed to N 2 formed from NH 3 upon electron exposure. In multilayer films of NH 3 this reaction proceeds without thermal activation7 and is ascribed to the disproportionation of NH 2 radicals formed upon electron exposure 8. Taking into account that ions in the condensed phase are stabilized by typically 1 to 2 eV relative to the gas phase, NH 2 radicals can be produced here by the dissociative ionization of NH 3 yielding NH 2 + (gas‐phase threshold: 15–16 eV6) followed by neutralization by thermalized electrons during exposure.…”
Section: Methodsmentioning
confidence: 99%
“…In the case of ammonia on Pt(111), Campbell et al observed that electron irradiation of condensed ammonia led to thermal desorption of H 2 g and N 2 g , in a process characterized as 'electronstimulated associative desorption.' 24 Similarly, irradiation of NO multilayers on Ge(100) with 600 eV electrons resulted in, among other things, the production and thermal desorption of N 2 g . 25,26 Therefore, we interpret the appearance of the mass 2 peak at 155 K following electron irradiation of TMA multilayers on Si(100) as electron-induced associative desorption of hydrogen.…”
Section: Condensed Tmamentioning
confidence: 99%