OBSERVATION OF SiC WITH Si(111) - 7 SURFACE STRUCTURE USING HIGH-ENERGY ELECTRON DIFFRACTION

Henderson, Richard C.; Polito, W. J.; Simpson, J. A.

doi:10.1063/1.1653014

Cited by 36 publications

(9 citation statements)

References 15 publications

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“…39 Additionally, the Si͑111͒ wafers were etched for 30 min in 40% NH 4 F and rinsed for 10 min in de-ionized water to prepare atomically smooth surfaces. 39 Additionally, the Si͑111͒ wafers were etched for 30 min in 40% NH 4 F and rinsed for 10 min in de-ionized water to prepare atomically smooth surfaces.…”

Section: Methodsmentioning

confidence: 99%

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

Schroeder

Costina

Storck³

et al. 2008

Journal of Applied Physics

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Section: Methodsmentioning

confidence: 99%

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

Schroeder

Costina

Storck³

et al. 2008

Journal of Applied Physics

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show abstract

“…Si ͑111͒ substrates ͑ =5-15 ⍀ cm͒ were cleaned by the standard Piranha etch procedure. 13 Additionally, the Si͑111͒ wafers were etched for 30 min in 40% NH 4 F and rinsed for 10 min in de-ionized water to prepare atomically smooth surfaces.…”

Section: Methodsmentioning

confidence: 99%

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Giussani

Seifarth

Rodenbach

et al. 2008

Journal of Applied Physics

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A combined structure and stoichiometry study on the growth behavior of single crystalline Ge(111) layers on PrO2(111)∕Si(111) heterostructures is presented. Ex situ x-ray diffraction techniques indicate that the interaction between Ge and PrO2(111) results in a complete reduction of the buffer oxide to a cubic Pr2O3(111) film structure. In situ reflection high energy electron diffraction, x-ray and ultraviolet photoelectron spectroscopy studies demonstrate that this chemical reduction of the oxide support occurs during the initial Ge growth stage. The interaction of PrO2 with Ge results in the formation of an amorphous Ge oxide layer by the diffusion of lattice oxygen from the dielectric to the forming semiconductor deposit. After the complete conversion of PrO2 to cubic Pr2O3, the supply of reactive lattice oxygen is exhausted and the continuous Ge deposition reduces the initially formed amorphous GeO2-like film to GeO. The sublimation of volatile GeO uncovers the single crystalline cubic Pr2O3(111) film surface which provides a thermodynamically stable template for elemental Ge heteroepitaxy. A Volmer–Weber growth mode is observed which results after island coalescence in the formation of atomically smooth, single crystalline Ge(111) layers.

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“…The nonideal environment consists of relatively high background gas pressure and other contamination sources such as an improper chemical solution, etc. 1,2,5,6 In addition, the effect of the vacuum ion gauge on the contamination should be considered since the vacuum ion gauge has been reported as a possible surface contamination source during a spectroscopic analysis. 7 The ion gauge is one of the most frequently used vacuum gauges in high vacuum or UHV apparatuses.…”

Section: Introductionmentioning

confidence: 99%

“…However, the H-passivated surface is subject to carbonaceous ͑C͒ contamination following degradation of the H-terminated surface, in contrast to an oxidepassivated surface of the conventional technique. 5,6 The factor of most concern in contamination is the residence time of a wafer in a nonideal environment. The nonideal environment consists of relatively high background gas pressure and other contamination sources such as an improper chemical solution, etc.…”

Section: Introductionmentioning

confidence: 99%

Effect of a vacuum ion gauge on the contamination of a hydrogen-passivated silicon surface

Yun

Lee

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The effect of operating a vacuum ion gauge on carbonaceous (C) contamination of a hydrogen (H)-passivated Si surface before epitaxial growth was investigated. The dependence of C contamination on the residence time in the loading chamber, tlc, was determined with or without operating a vacuum ion gauge. The results showed that C contamination of a H-passivated surface was greatly increased by use of the ion gauge. With ion gauge operation in a vacuum of 1×10−6–1×10−7 Torr in the loading chamber, the configuration of the ion gauge and upside down-stacked wafers is shown to be a dominant factor of C contamination of the Si surface. The presence of C contaminants could be determined by observing SiC diffraction patterns using in situ reflection high energy electron diffraction (RHEED), since the C contaminants reacted with Si to produce single crystalline SiC at a temperature as high as 850 °C. The RHEED patterns demonstrated that the single crystalline SiC had a zinc-blende structure. Single crystalline SiC islands with an ellipsoidal cross section were observed by high resolution transmission electron microscopy. In the subsequent epitaxial growth of Si, a well oriented single crystalline Si layer could be grown over the SiC islands although the effect of C contamination on the electrical characteristics of the interface was not clarified. Longer tlc with the ion gauge also required a higher temperature to achieve a 2×1 reconstructed surface structure from the H-passivated Si surface.

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OBSERVATION OF SiC WITH Si(111) - 7 SURFACE STRUCTURE USING HIGH-ENERGY ELECTRON DIFFRACTION

Cited by 36 publications

References 15 publications

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Effect of a vacuum ion gauge on the contamination of a hydrogen-passivated silicon surface

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