Observation of two-dimensional resonant magnetopolarons and phonon-assisted resonant tunneling in double-barrier heterostructures

Chen, JG; Yang, Chaodong; Yang, M. J.; Wilson, Riley

doi:10.1103/physrevb.43.4531

Cited by 30 publications

(12 citation statements)

References 9 publications

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“…[3][4][5][6][7][8] Weaker peaks at higher bias in the tunneling characteristic have been associated with inelastic tunneling processes. [9][10][11][12][13][14][15] Elastic and inelastic tunneling processes have also been identified in triple-barrier resonant tunneling structures ͑TBRTS's͒. [16][17][18][19][20][21][22][23][24] Our measurements of two selected GaAs/ AlAs TBRTS's at low temperatures and in high magnetic fields demonstrate the critical role played by the second well in determining the overall tunneling characteristic.…”

Section: Introductionmentioning

confidence: 94%

Resonant tunneling in double-quantum-well triple-barrier heterostructures

et al. 1996

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We present a low-temperature ͑mK͒ magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled by the position of the lowest bound state in the second well, and identify tunneling transitions that are unique to triple-barrier structures. We also demonstrate that the tunneling current is sensitive to integer and fractional quantum Hall effect states, and find that the voltage-tunable accumulation of charge in one of the samples provides an unusual environment for the study of ground states of a two-dimensional electron system. ͓S0163-1829͑96͒06431-4͔

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Section: Introductionmentioning

confidence: 94%

Resonant tunneling in double-quantum-well triple-barrier heterostructures

et al. 1996

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“…The experimental investigations of phonon-assisted magnetotunneling ͑PAMT͒ processes show that the satellite peaks become higher and sharper, and split into several peaks associated with different transitions between the Landau levels of the emitter and well layers [3][4][5][6] in the presence of a magnetic filed parallel to an applied electric filed. Moreover, some experimental observations indicate that asymmetric double barrier structures ͑ADBSs͒ may vary the amount of charge accumulation in the well so that the currentvoltage characteristics can be modified.…”

Section: Introductionmentioning

confidence: 98%

“…Several experiments have exhibited additional satellite peaks at an applied voltage just above the resonant voltage in the current-voltage curves. [2][3][4][5][6] The satellite peaks are generally attributed to the emission of optical phonons by tunneling electrons. Previous theoretical investigations indicated that the interface-optical ͑IO͒ phonon modes play an important role in the e -p interaction properties in multilayer systems of polar semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Role of interface optical phonons in magnetotunneling in asymmetric double-barrier structures

Yan

Liang

2002

Journal of Applied Physics

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The role of interface-optical (IO) phonons in tunneling through an asymmetric double barrier structure in a magnetic field perpendicular to the barriers is studied. The phonon-assisted tunneling current densities are calculated and the numerical results for typical AlxGa1−xAs/GaAs/AlyGa1−yAs structures are given. The theoretical results show that the applied magnetic field sharpens and heightens the phonon-assisted tunneling peaks in agreement with experimental observations. In contrast to previous work, the calculated IO phonon-assisted tunneling current peak occurs at the energy the same as that of the bulk GaAs longitudinal-optical (LO) phonon energy. The IO phonon-assisted tunneling is much more important than the confined LO phonon-assisted tunneling. The phonon-assisted tunneling currents are sensitive to the thickness of the emitter barrier. Only one phonon-assisted tunneling peak can be easily observed for the wider well case.

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“…The electron-phonon interaction within the 2DEG of III-V RTSs leads to a formation of magnetopolarons 16 manifested as a characteristic anticrossing of LLs which has been observed in magnetotunnelling experiments [6][7][8][9]12 . Another important phenomenon in InAsbased RTSs is the spin-orbit interaction (SOI).…”

Section: Introductionmentioning

confidence: 99%

Magnetotunneling in resonant tunneling structures with spin − orbit interaction

Isić

Indjin

Milanović

et al. 2011

Journal of Applied Physics

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Magnetotunnelling spectroscopy of resonant tunnelling structures provides information on the nature of the two-dimensional electron gas in the well. We describe a model based on nonequilibrium Green's functions that allows for a comprehensive study of the density of states, tunnelling currents and current spin polarization. The investigated effects include the electron-phonon interaction, interface roughness scattering, Zeeman effect and the Rashba spin-orbit interaction. A qualitative agreement with experimental data is found regarding the satellite peaks. The spin polarization is predicted to be larger than ten percent for magnetic fields above 2 Tesla and having a structure even at the satellite peaks. The Rashba effect is confirmed to be observable as a beating pattern in the density of states but found to be too small to affect the tunnelling current.

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Observation of two-dimensional resonant magnetopolarons and phonon-assisted resonant tunneling in double-barrier heterostructures

Cited by 30 publications

References 9 publications

Resonant tunneling in double-quantum-well triple-barrier heterostructures

Resonant tunneling in double-quantum-well triple-barrier heterostructures

Role of interface optical phonons in magnetotunneling in asymmetric double-barrier structures

Magnetotunneling in resonant tunneling structures with spin − orbit interaction

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