OBSERVATIONS OF PENDELLÖSUNG FRINGES AND IMAGES OF DISLOCATIONS BY X-RAY SHADOW MICROGRAPHS OF Si CRYSTALS

Hashimoto, H.; Kozaki, Shigeru; Ohkawa, T.

doi:10.1063/1.1754117

Cited by 7 publications

(2 citation statements)

References 8 publications

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“…t Pendell6sung fringes for the diffraction of continuous radiation from wedge portions of Si single crystals were reported by Hashimoto, Kozaki & Ohkawa (1965) and Kozai, Ohkawa & Hashimoto (1968).…”

Section: Introductionmentioning

confidence: 87%

Dynamical contrast of the topographic image of a crystal with continuous X-ray radiation. I. An experimental observation of polychromatic interference fringes and their application for the investigation of the anomalous scattering of X-rays by perfect crystals

Аристов¹,

Шмытько²,

Shulakov³

1977

Acta Cryst Sect A

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Contrast is investigated of topographic images obtained on perfect plane-parallel and wedge-shaped crystals with continuous X-ray radiation. Quasiperiodic variation of intensity was observed on the topographs of plane-parallel wafers in the direction of the change of wavelength. It is experimentally shown that these oscillations of intensity are interference fringes. An analysis is given of the formation of polychromatic interference fringes from wedge-shaped wafers. A method is suggested on the basis of this analysis for determining the atomic scattering factor over a wide range of wavelengths. The method was used for the determination of atomic scattering factors of Si and Ge. The phenomenon of anomalous scattering at the K absorption edge of Ge was experimentally observed.

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Section: Introductionmentioning

confidence: 87%

Dynamical contrast of the topographic image of a crystal with continuous X-ray radiation. I. An experimental observation of polychromatic interference fringes and their application for the investigation of the anomalous scattering of X-rays by perfect crystals

Аристов¹,

Шмытько²,

Shulakov³

1977

Acta Cryst Sect A

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“…The Pendell6sung fringes have also been observed in the topographic images of white radiation (Hashimoto, 1965;Kozaki, Ohkawa & Hashimoto, 1968;Aristov, Shmytko & Shulakov, 1977a,b). These fringes are apparently produced by the change in extinction distance with the wavelength of diffracted X-rays.…”

Section: Introductionmentioning

confidence: 87%

Measurement of X-rayPendellösungintensity beats in diffracted white radiation from silicon wafers

Takama¹,

Iwasaki²,

Sato³

1980

Acta Cryst Sect A

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Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

Olekhnovich

Karpei

Skidan

et al. 1982

phys. stat. sol. (a)

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Results of a study of thickness oscillations (Pendellösung beats) of the X‐ray integrated intensity for the symmetrical Laue case of silicon dislocation single crystals are presented over the temperature range from 100 to 295 K. The oscillation period is found to increase with the dislocation density and the reflection order. It is shown that the Debye temperature θM can be precisely determined by the temperature shift of the oscillation patterns for dislocation crystals. The value of θM, obtained from the temperature dependence of Pendellösung intensity beats for a real crystal agrees well with that for a perfect one.

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OBSERVATIONS OF PENDELLÖSUNG FRINGES AND IMAGES OF DISLOCATIONS BY X-RAY SHADOW MICROGRAPHS OF Si CRYSTALS

Cited by 7 publications

References 8 publications

Dynamical contrast of the topographic image of a crystal with continuous X-ray radiation. I. An experimental observation of polychromatic interference fringes and their application for the investigation of the anomalous scattering of X-rays by perfect crystals

Dynamical contrast of the topographic image of a crystal with continuous X-ray radiation. I. An experimental observation of polychromatic interference fringes and their application for the investigation of the anomalous scattering of X-rays by perfect crystals

Measurement of X-rayPendellösungintensity beats in diffracted white radiation from silicon wafers

Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

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