Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Spera, Monia; Greco, Giuseppe; Corso, D.; Franco, Salvatore Di; Severino, Andrea; Messina, Angelo; Giannazzo, Filippo; Roccaforte, Fabrizio

doi:10.3390/ma12213468

Cited by 13 publications

(10 citation statements)

References 36 publications

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“…The large specific on-resistance of impla-PiN implies the presence of additional resistive components, such as a poor contact resistivity due to the ohmic contact formation on the implanted region with low temperature activation annealing. [28] The DLTS spectra of epi-PiN with three bias conditions (combination of V r and V p were À2.5 and À0.5 V, À6.5 and À4.0 V, and À9.5 and À7.0 V, respectively) are shown in Figure 4. The observed depths from the pn junction in the n-type drift layer are shown in the spectra, which are estimated based on the C-V measurements when taking the lambda effect into account.…”

Section: Resultsmentioning

confidence: 99%

“…The smaller differential specific on-resistance for epi-PiN determined experimentally as compared with the calculations implies a reduction in resistance owing to the conductivity modulation. The large specific on-resistance of impla-PiN implies the presence of additional resistive components, such as a poor contact resistivity due to the ohmic contact formation on the implanted region with low temperature activation annealing [28]. The DLTS spectra of epi-PiN with three bias conditions (combination of V r and V p were À2.5 and À0.5 V, À6.5 and À4.0 V, and À9.5 and À7.0 V, respectively) are shown in Figure4.…”

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confidence: 99%

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Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

Fukaya

Yonezawa

Kato

et al. 2021

Physica Status Solidi (b)

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In the development of 4H‐SiC bipolar devices, defect generation during the fabrication process is an important issue for maintaining a long carrier lifetime in the drift layers. Herein, two 4H‐SiC PiN diode structures are produced with a p‐type layer fabricated through epitaxial growth or Al ion implantation; and the current–voltage characteristics and defect distribution observed using deep‐level transient spectroscopy and cathodoluminescence (CL) are compared. The PiN diode fabricated through ion implantation shows higher deep‐level concentrations even at a drift layer depth of ≈6 μm from the junction. In addition, the concentrations at the deep levels decrease with the depth, as does the CL intensity originating from defects. Therefore, defects induced through Al‐ion implantation are distributed into a drift layer with a gradual decrease in the concentration along the depth. These results suggest that drift layers in 4H‐SiC bipolar devices should be fabricated in regions far from the Al‐ion‐implanted regions to induce an efficient conductivity modulation.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

Fukaya

Yonezawa

Kato

et al. 2021

Physica Status Solidi (b)

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“…Hence, this Ti/Al/Ni metallization scheme has been tested on the p-type implanted layers annealed under different conditions [ 97 ].…”

Section: Effects Of Selective Implantation Doping On Relevant Sic Devices Parametersmentioning

confidence: 99%

“…( b ) Specific contact resistance, ρ C , of the Ti/Al/Ni contacts as a function of the post-implantation annealing temperature. The figure is adapted from [ 97 ]. Copyright © 2021 by the authors; licensee MDPI, Basel, Switzerland.…”

Section: Figurementioning

confidence: 99%

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Selective Doping in Silicon Carbide Power Devices

et al. 2021

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Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to illustrating the main features of n-type and p-type ion-implantation doping of SiC and discussing the related issues. As an example, one of the main features of implantation doping is the need for post-implantation annealing processes at high temperatures (above 1500 °C) for electrical activation, thus having a notable morphological and structural impact on the material and, hence, on some device parameters. In this respect, some specific examples elucidating the relevant implications on devices’ performances are reported in the paper. Finally, a short overview of recently developed non-conventional doping and annealing techniques is also provided, although these techniques are still far from being applied in large-scale devices’ manufacturing.

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Highly Sensitive Photoelectric Detection and Imaging Enhanced by the Pyro‐Phototronic Effect Based on a Photoinduced Dynamic Schottky Effect in 4H‐SiC

Zhang

Wang

et al. 2022

Advanced Materials

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Silicon carbide (SiC), one of the third‐generation semiconductor materials with excellent electrical and optoelectronic properties, is ideal for high light‐sensing performance. Here, a self‐powered SiC ultraviolet (UV) photodetector (PD) is constructed with wider applicability and higher commercialization potential. The great performance of the PD is realized by a remarkable photoinduced dynamic Schottky effect derived from the symbiotic modulation of Schottky and Ohmic contact. Using the pyro‐phototronic effect that exists in the N‐doped 4H‐SiC single crystal PDs, a fast pyroelectric response time of 0.27 s is achieved, which is almost ten times shorter than that obtained from the steady‐state signal under UV illumination. The maximal transient photoresponsivity reaches 9.12 nA mW−1, which is ≈20% higher than the conventional photoelectric signal. Moreover, different regions of the 4H‐SiC centimeter‐scale chip output distinct signals under UV illumination, demonstrating efficient optical imaging and information transmission capabilities of this device. This work not only reveals the fundamental optoelectronic physics lying in this vital third‐generation semiconductor, but also sheds light on its potential photosensing applications for large‐scale commercialization.

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Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Cited by 13 publications

References 36 publications

Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

Selective Doping in Silicon Carbide Power Devices

Highly Sensitive Photoelectric Detection and Imaging Enhanced by the Pyro‐Phototronic Effect Based on a Photoinduced Dynamic Schottky Effect in 4H‐SiC

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