Ohmic contacts to GaAs epitaxial layers

Kim, T.-J.; Holloway, Paul H.

doi:10.1080/10408439708241262

Cited by 26 publications

(27 citation statements)

References 147 publications

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“…4b) enables both characterisation of the whole pnjunction and investigation of the individually doped wire parts. While a non-annealed Ti/Pt/Ti/Au metallization was used for the p-doped part of the wire, typical Ge/Ni/Ge/Au annealed contacts [11] were used for the n-GaAs wire. The maximum annealing temperature for the n-contacts was reduced to 320 1C in order to avoid the possible diffusion of Ga atoms into the Ge/Ni/Ge/Au.…”

Section: Resultsmentioning

confidence: 99%

Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires

Regolin

Gutsche

Lysov

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires

Regolin

Gutsche

Lysov

et al. 2011

Journal of Crystal Growth

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“…This AuGeNi alloying system is depicted in Fig. 5a [41]. Special attention must be given to the specific contact resistivity (typical 1x10 -6 :cm 2 ), the reduction of surface roughness due to balling-up, the thermal stability and the process reproducibility.…”

Section: Iii-v Compounds-based Technologiesmentioning

confidence: 99%

Contact technology schemes for advanced Ge and III-V CMOS technologies

Claeys

Firrincieli

Martens

et al. 2012

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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For sub 22 nm technologies the use of both Ge and III-V based devices is extensively investigated because of their promising electrical performances. However, for both types of devices it is of utmost importance to achieve ohmic contacts with a low specific contact resistivity in the order of 1x10 -8 : :cm 2 or below. This paper reviews some basic aspects and recent insights in contact technology schemes for both Ge and III-V based technologies.

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“…Low resistance ohmic contacts to planar n-GaAs wafers are frequently achieved by local diffusion of germanium (Ge) atoms into the semiconductor using rapid thermal annealing (RTA) [18]. The detailed kinetics of such a diffusion process is material dependent, complex, and -in most practical cases-not well understood.…”

Section: Introductionmentioning

confidence: 99%

“…Improved contacts to n-GaAs had been achieved by adding a thin layer of palladium (Pd) placed between the GaAs surface and the Ge layer, where the Pd acts like a catalyst promoting the aspired diffusion of germanium into GaAs [19]. The specific diffusion process was described phenomenologically by a regrowth model [18]. In a nutshell, the Pd enables out-diffusion of Ga from the GaAs wafer before it quickly diffuses through the Ge layer away from the GaAs surface [20].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Ohmic Contacts to n -Type GaAs Nanowires

et al. 2018

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III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separation of carriers from the wire surface render electrical contacting difficult. Systematically studying ohmic contact formation by diffusion to n-doped GaAs nanowires, we provide a set of optimal annealing parameters for Pd/Ge/Au ohmic contacts. We reproducibly achieve low specific contact resistances of ∼ 2 × 10 −7 Ωcm 2 at room temperature becoming an order of magnitude higher at T 4.2 K. We provide a phenomenological model to describe contact resistances as a function of diffusion parameters. Implementing a transfer-matrix method, we numerically study the influence of the Schottky barrier on the contact resistance. Our results indicate that contact resistances can be predicted using various barrier shapes but further insights into structural properties would require a full microscopic understanding of the complex diffusion processes.

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Ohmic contacts to GaAs epitaxial layers

Cited by 26 publications

References 147 publications

Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires

Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires

Contact technology schemes for advanced Ge and III-V CMOS technologies

Optimization of Ohmic Contacts to n -Type GaAs Nanowires

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